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Method of driving nonvolatile memory devices

A non-volatile memory technology, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as misinterpretation and reading data errors

Active Publication Date: 2015-05-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] It is unacceptable for the threshold voltage of a programmed non-volatile memory cell to vary significantly over time because the resulting "altered" threshold voltage can be misinterpreted, resulting in read data errors

Method used

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  • Method of driving nonvolatile memory devices
  • Method of driving nonvolatile memory devices
  • Method of driving nonvolatile memory devices

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Embodiment Construction

[0021] Certain embodiments of the inventive concept will now be described in some additional detail with reference to the accompanying drawings. However, the inventive concept may be embodied in many different forms and should not be construed as limited to the illustrated embodiments. Moreover, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. Throughout the written specification and drawings, the same reference numerals are used to designate the same or similar elements.

[0022] It will be understood that when an element or component is referred to as being “on” another element, it can be directly “on” the other element or intervening elements may be present. In contrast, when an element is referred to as being arranged or disposed "directly on" another element, there are no intervening elements present.

[0023] It should be understood that the terms ...

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Abstract

A method of driving a nonvolatile memory device, includes; forward shifting threshold voltages of nonvolatile memory cells by executing a first program loop with respect to the nonvolatile memory cells, and thereafter, reverse shifting the threshold voltages of the nonvolatile memory cells, and again forward shifting the threshold voltages of the nonvolatile memory cells by executing a second program loop with respect to the nonvolatile memory cells.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0136351 filed on Nov. 11, 2013, the subject matter of which is incorporated herein by reference. technical field [0003] The inventive concept generally relates to a method of driving a nonvolatile memory device. Background technique [0004] The threshold voltage of programmed non-volatile memory cells in a particular non-volatile memory device and system tends to vary over time. There are many reasons for this adverse outcome related to environmental factors, operational factors and fundamental properties of the materials used to fabricate the nonvolatile memory cells. [0005] It is unacceptable for the threshold voltage of a programmed non-volatile memory cell to vary significantly over time because the resulting "altered" threshold voltage can be misinterpreted, resulting in read data errors. Contents of the invention [0006] In one ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06
CPCG11C11/5628G11C16/3404G11C16/10G11C16/34
Inventor 郭东勋朴起台
Owner SAMSUNG ELECTRONICS CO LTD