A traction mechanism for seed crystals in the production process of re-doped single crystals in single crystal furnaces

Abstract

The invention discloses a traction mechanism for seed crystals in a heavily-doped single crystal production process of a single crystal furnace. The traction mechanism comprises a lifting device consisting of a flexible shaft, a connecting rod, a counterweight, and a clamping wedge which are sequentially connected from top to bottom, wherein each of the flexible shaft, the connecting rod, the counterweight and the clamping wedge adopts a cylindrical structure; an impurity removal device is arranged outside the lifting device, and comprises an impurity removal barrel, an impurity removal bowl and a positioning mechanism; a plurality of annular dust collection tables are fixedly arranged on the inner wall of the impurity removal barrel; the upper end surface of the inner side of the dust collection table at the lowermost end is positioned with the lower end surface of the clamping wedge in a contact manner; the inner wall of the upper dust collection table is in contact and positioned with the outer lateral surface of the lifting device; two pairs of penetration holes and positioning rods in the penetration holes are arranged at the upper part of the impurity removal barrel; the connecting rod penetrates through a part between the two positioning rods; the lower ends of the two positioning rods are in contact and positioned with the upper end surface of the counterweight. When single crystals are produced by seed crystals under the traction of the traction mechanism, impurities falling from the lifting device are collected by the impurity removal device, and by the mechanism, the bract breakage rate of the single crystals can be greatly lowered, production efficiency can be greatly improved, and production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material processing equipment, and in particular relates to a traction mechanism for seed crystals in the production process of re-doped single crystals in a single crystal furnace. Background technique [0002] The semiconductor material monocrystalline silicon is drawn in a single crystal furnace. At present, the general production process is: furnace cleaning→feeding materials into a quartz crucible→closing the furnace door, heating up the molten material→doping impurities that affect the electrical parameters of the product → Pulling monocrystalline silicon rods → cooling, starting the furnace, and taking monocrystalline silicon rods. This is a mature process that has been used for many years. [0003] Under the traditional single crystal growth process, due to the large amount of doped impurities in the heavily doped single crystal, the impurities have more volatiles under low pressure ...

AI Technical Summary

Problems solved by technology

[0004] The invention overcomes the problems of single crystal breakage, low production efficiency, and high production cost caused by the shedding of impurities in the traditional production process of single crystal silicon, and provides a traction mechanism for seed crystals in the production process of re-doped single crystals in single crystal furnaces , the traction mechanism can prevent impurities from falling on the surface of the growing single crystal, improve the production efficiency of the single crystal, and reduce the production cost

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