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Method of manufacturing semiconductor device including proton irradiation and semiconductor device including charge compensation structure

A charge compensation and proton irradiation technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, etc., can solve problems such as degradation, degradation of device performance, and target charge balance deviation

Active Publication Date: 2018-04-24
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Process tolerances create deviations from the target charge balance that can lead to undesirable degradation in device performance such as reduction in source-to-drain breakdown voltage

Method used

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  • Method of manufacturing semiconductor device including proton irradiation and semiconductor device including charge compensation structure
  • Method of manufacturing semiconductor device including proton irradiation and semiconductor device including charge compensation structure
  • Method of manufacturing semiconductor device including proton irradiation and semiconductor device including charge compensation structure

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Embodiment Construction

[0015] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the disclosure may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described for one embodiment can be used on or in conjunction with other embodiments to yield a still further embodiment. It is intended that the present disclosure includes such modifications and variations. The examples are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not drawn to scale and are for illustration purposes only. For the sake of clarity, the same elements have been designated by corresponding reference numerals in the different figures, if not stated ot...

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Abstract

The present invention relates to a method of manufacturing a semiconductor device including proton irradiation and a semiconductor device including a charge compensation structure. A method of fabricating a semiconductor device includes forming a charge compensation device structure in a semiconductor substrate. The method also includes measuring a value related to an electrical characteristic of the charge compensation device. At least one of proton irradiation and annealing parameters are adjusted based on the measured values. Based on the at least one of the adjusted proton irradiation and annealing parameters, the semiconductor substrate is irradiated with protons and thereafter annealed.

Description

Background technique [0001] Semiconductor devices, known as charge-compensated or superjunction (SJ) semiconductor devices such as SJ insulated-gate field-effect transistors (SJIGFETs), are based on mutual space-charge compensation of n- and p-doped regions in a semiconductor substrate, allowing low area-specific Improved compromise between on-state resistance Ron x A and high breakdown voltage Vbr across load terminals such as source and drain. Charge compensation or the performance of SJ semiconductor devices depends on the lateral or horizontal charge balance between n-doped and p-doped regions. Process tolerances cause deviations from the target charge balance, which can lead to undesirable degradation in device performance, such as a reduction in source-to-drain breakdown voltage. [0002] It is desirable to improve the trade-off between area-specific on-state resistance and blocking voltage of a semiconductor device and to reduce the impact of process tolerances on this...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/26H01L29/06
CPCH01L21/263H01L21/324H01L29/32H01L29/66659H01L29/66681H01L29/66712H01L29/7816H01L29/7835H01L29/0878H01L29/1095H01L29/167H01L22/14H01L22/34H01L29/0634H01L29/7802
Inventor W.彦切尔H-J.舒尔策W.舒施特雷德H.施特拉克H.韦伯
Owner INFINEON TECH AG