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Post-treatment method for removing photoresist and manufacturing method of semiconductor device

A production method and photoresist technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that wet cleaning is difficult to meet the requirements of the surface cleanliness of semiconductor devices

Inactive Publication Date: 2015-07-01
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] This application aims to provide a photoresist removal post-processing method and a semiconductor device manufacturing method to solve the problem that wet cleaning in the existing photoresist removal post-processing is difficult to meet the requirements of the existing process for the surface cleanliness of semiconductor devices The problem

Method used

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  • Post-treatment method for removing photoresist and manufacturing method of semiconductor device

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Embodiment 1

[0037] This embodiment provides a post-processing method for photoresist removal, comprising the following steps:

[0038] The semiconductor device after removing the photoresist is cleaned for the first time, and its specific steps include: at 20 ° C, HF and H 2 The HF solution with the volume ratio of O of 1:500 is sprayed onto the semiconductor device after the first cleaning, and the HF solution is evenly distributed on the surface of the semiconductor device by rotating at a low speed (300rpm), and the flow rate of the HF solution is 1.2L / min; The semiconductor device after removing the photoresist is cleaned for the first time, and the cleaning time is 60 seconds.

[0039] Carry out the second cleaning to the semiconductor device after cleaning for the first time, its specific steps include: at 20 ℃, the O 3 The ozone water with a content of 10ppm is sprayed onto the semiconductor device after the first cleaning, and the ozone water is evenly distributed on the surface ...

Embodiment 2

[0042] This embodiment provides a post-processing method for photoresist removal, comprising the following steps:

[0043] The semiconductor device after removing the photoresist is cleaned for the first time, including the following steps: at 30 ° C, HF and H 2 The HF solution with a volume ratio of O of 1:1600 is placed in a cleaning tank, and then the semiconductor device after removing the photoresist is immersed in the HF solution for cleaning, and the cleaning time is 45 seconds.

[0044] Carry out the second cleaning to the semiconductor device after the first cleaning, its specific steps include: at 30 ℃, the O 3 The ozone water with a content of 55ppm is sprayed on the semiconductor device after the first cleaning, and the ozone water is evenly distributed on the surface of the semiconductor device by rotating at a low speed (300rpm). The flow rate of the ozone water is 1.2L / min; for the first The second cleaning is performed on the semiconductor device after the fir...

Embodiment 3

[0047] This embodiment provides a post-processing method for photoresist removal, comprising the following steps:

[0048] The semiconductor device after removing the photoresist is cleaned for the first time, and its specific steps include: at room temperature, HF and H 2 The HF solution with a volume ratio of O of 1:3000 is sprayed on the semiconductor device after the first cleaning, and the HF solution is evenly distributed on the surface of the semiconductor device by rotating at a low speed (500rpm), and the flow rate of HF is 2L / min; The semiconductor device after removing the photoresist is cleaned for the first time, and the cleaning time is 5 seconds.

[0049] Carry out the second cleaning to the semiconductor device after cleaning for the first time, its specific steps include: at room temperature, the O 3 The ozone water with a content of 100ppm is sprayed on the semiconductor device after the first cleaning, and the ozone water is evenly distributed on the surfac...

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Abstract

The invention discloses a post-treatment method for removing a photoresist and a manufacturing method of a semiconductor device. The post-treatment method for removing the photoresist comprises the following steps: performing first cleaning on the semiconductor device after the photoresist is removed by using HF (Hydrogen Fluoride) solution; performing second cleaning on the semiconductor device after the first cleaning by using ozone water. According to the method, the semiconductor device is cleaned by using the HF solution and the ozone water in sequence, so that the photoresist with smaller particle size remained on the semiconductor device is removed, and the semiconductor device which meet the requirement on surface clean degree of the semiconductor device of the exiting process is obtained.

Description

technical field [0001] The present application relates to the technical field of manufacturing semiconductor integrated circuits, in particular, to a post-processing method for removing photoresist and a method for manufacturing a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, after the semiconductor device is manufactured, the photoresist on the surface of the semiconductor device needs to be removed. The existing photoresist removal process steps are to remove the photoresist on the semiconductor device by ashing or wet etching process, and then use the wet cleaning method to remove the residual photoresist on the surface of the semiconductor device. However, it is difficult to completely remove the photoresist residue on the surface of the semiconductor device by the existing wet cleaning method, which may cause defects in the semiconductor device, thereby affecting the stability and other performance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3105H01L21/308
CPCH01L21/31127
Inventor 刘焕新
Owner SEMICON MFG INT (SHANGHAI) CORP
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