Method Of Joining Semiconductor Substrate

Abstract

A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2013-0167810 filed in the Korean Intellectual Property Office on December 30, 2013, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to a bonding method of semiconductor substrates. More specifically, the present invention provides a method of bonding semiconductor substrates on which a metal layer is formed. Background technique [0004] Typically, metal layers and insulating layers are deposited or micropatterned on one semiconductor substrate to form a semiconductor device. Also, a semiconductor device may be formed by bonding two or more semiconductor substrates on which thin film layers such as metal layers and insulating layers and micropatterns may be formed. [0005] As used herein, a semiconductor substrate or wafer may be a substrate obtained by growing...

AI Technical Summary

Problems solved by technology

However, as reported in the related art, subtle errors may also occur

Also, alignment errors may arise due to thermal expansion during multiple bonding processes, or metal layers may reflow through heat or pressure during bonding, causing defects

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