Method and device for liquid flow deposition of film on inner wall of silicon micro-channel by utilizing improved differential pressure method

A technology of silicon microchannel and differential pressure method, used in microstructure devices, manufacturing microstructure devices, decorative arts, etc., can solve problems such as inability to deposit, and achieve the effect of improving overall performance and improving film deposition unevenness.

Inactive Publication Date: 2015-08-19
EAST CHINA NORMAL UNIV +1
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a kind of method that utilizes liquid surface pressure difference to carry out liquid flow deposition thin film on silicon microchannel inner wall, is used for solving the problem that existing technology can't be deposited into uniform thin film on silicon microchannel inner wall, Apply it to micro energy devices to improve their overall performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for liquid flow deposition of film on inner wall of silicon micro-channel by utilizing improved differential pressure method
  • Method and device for liquid flow deposition of film on inner wall of silicon micro-channel by utilizing improved differential pressure method
  • Method and device for liquid flow deposition of film on inner wall of silicon micro-channel by utilizing improved differential pressure method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The technical characteristics of the present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.

[0023] Such as figure 1 Shown, a kind of improved differential pressure method liquid flow deposits thin film device on the inner wall of silicon microchannel, comprises container; Described container is divided into two cavities by dividing plate cavity: the first cavity 1 and the second cavity Two cavities 2; the dividing plate between the first cavity 1 and the second cavity 2 is provided with a draw-in groove 3 communicating with the two cavities; a silicon microchannel is placed on the draw-in groove 3; in the first A circulating pump 4 is arranged between the cavity 1 and the second cavity 2, wherein the water inlet of the circulating pump 4 is set at the bottom of the second cavity 2, and the water outlet is set above the first cavity 1; The first cavity 1 is filled with a plating solution for flow depos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method and a device for liquid flow deposition of a film on an inner wall of a silicon micro-channel by utilizing an improved differential pressure method. The device comprises a container, wherein a cavity of the container is divided into two cavities, namely a first cavity and a second cavity, through a partition board; a clamping groove communicated with the two cavities is arranged on the partition board between the first cavity and the second cavity; the silicon micro-channel is arranged in the clamping groove; a circulating pump is arranged between the first cavity and the second cavity, wherein a water inlet of the circulating pump is arranged at the bottom of the second cavity, and a water outlet of the circulating pump is arranged above the first cavity; and plating solution for liquid flow deposition is injected into the first cavity. The method and the device have the beneficial effects that the phenomenon that non-uniform film deposition on the inner wall of the silicon micro-channel occurs when the film deposition is carried out by the conventional deposition method and the conventional differential pressure deposition method is remarkably improved, and the silicon micro-channel subjected to film deposition by the improved differential pressure liquid flow deposition method is taken as an electrode of a lithium ion battery, so that the overall performance of the lithium ion battery can be improved.

Description

technical field [0001] The invention relates to a method and a device for depositing a thin film by liquid flow on the inner wall of a silicon microchannel by using a liquid surface pressure difference, and belongs to the field of micro-electromechanical systems. Background technique [0002] Silicon microchannel plate is a porous silicon material. Due to its special structure, it is of great significance to many scientific research fields. Among them, silicon microchannel has outstanding performance in photomultiplier and heat conduction devices, and in micro energy devices, For example, in lithium-ion batteries and supercapacitors, the excellent performance of silicon microchannel plates has gradually become prominent. How to deposit various functional materials on the side walls of silicon microchannels has also become an important research content. Existing technologies, such as sol-gel method, electroplating method, traditional electroless plating (chemical plating) me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00H01M4/139
CPCY02E60/10
Inventor 王连卫梁赪朱一平徐少辉
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products