Method for modeling SiC MOSFET simulation model

A simulation model and modeling method technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as difficult quantification by users, uncertainty of model parameters, and increased modeling costs

Active Publication Date: 2015-09-09
BEIJING JIAOTONG UNIV
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Problems solved by technology

However, in the prior art, due to the gate-to-drain capacitance C GD There are many circuit components in the switch model, it is difficult for users to quantify the effect of each component parameter value on the gate-drain capacitance C GD The influence of the capacitance value can only clarify...

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  • Method for modeling SiC MOSFET simulation model
  • Method for modeling SiC MOSFET simulation model
  • Method for modeling SiC MOSFET simulation model

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Embodiment Construction

[0045] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0046] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicat...

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Abstract

The present invention discloses a method for modeling a SiC MOSFET simulation model, which comprises the following steps: modeling a SiC MOSFET with an equivalent circuit modeling method to obtain a first model; modeling a static property of the SiC MOSFET according to a transfer characteristic curve and an output characteristic curve provided by Datasheet of the SiC MOSFET and the first model to obtain a static simulation model of SiC MOSFET; modeling a dynamic property of the SiC MOSFET based on a C-VDS curve provided by the Datasheet of the SiC MOSFET and the first model to obtain a dynamic simulation model of the SiC MOSFET. By using the modeling method according to the present invention, a more accurate SiC MOSFET simulation model can be established. In addition, the modeling method has universality.

Description

technical field [0001] The invention relates to the technical field of silicon carbide SiC MOSFETs, in particular to a modeling method of a SiC MOSFET simulation model. Background technique [0002] At present, there are two methods to establish the static simulation model of SiC MOSFET. One is to use the MOSFET model that comes with the Pspice simulation software to describe the static characteristics of SiC MOSFETs. There are three models, MOS1-MOS3. Among them, the MOS1 model is a first-order model, which describes the square rate characteristic of the current-voltage, and is suitable for long-channel MOSFETs with low precision requirements; the MOS2 model considers the short-channel and narrow-channel threshold voltage in the calculation process. Influence and factors such as the change of mobility with the surface electric field; the MOS3 model is a semi-empirical model suitable for short-channel MOSFETs. Since these three models are practical models for traditional S...

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Application Information

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IPC IPC(8): G06F17/50
Inventor 李虹徐艳明郑琼林杨志昌林飞杨中平郭希铮游小杰孙湖
Owner BEIJING JIAOTONG UNIV
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