Unlock instant, AI-driven research and patent intelligence for your innovation.

eeprom storage array and eeprom

A storage array and storage unit technology, applied in the field of semiconductors, can solve problems affecting data storage and the reliability of storage units cannot be detected, and achieve the effect of avoiding impact

Active Publication Date: 2018-08-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the reliability of these storage units cannot be detected, when problems such as aging occur, these unused storage units may affect the data storage of other normal storage units

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • eeprom storage array and eeprom
  • eeprom storage array and eeprom
  • eeprom storage array and eeprom

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Compared with EPROM, EEPROM can erase the information on the chip with a specific voltage without using ultraviolet radiation to write new data. It is very convenient in operation, so it is widely used in BIOS chips that need to be erased frequently and Flash memory chips, and gradually replace some random access memory chips that require power-off retention, and even replace part of the hard disk function. In the existing EEPROM memory, according to the needs of circuit design, some memory cells will not be used. Since the reliability of these storage units cannot be detected, when problems such as aging occur, these unused storage units may affect the data storage of other normal storage units.

[0022] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] The embodiment of the inve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an EEPROM (electrically erasable programmable read-only memory) array and an EEPROM, wherein the EEPROM array comprises M word lines, N bit lines, M control gate lines and memory units, the M word lines are arranged according to a row direction, the N bit lines are arranged according to a column direction, and the memory units are arranged in the form of an array; each memory unit comprises a drain region, a source region, a floating gate and a control gate; the drain regions of the memory units are coupled with the bit lines; the source regions of the memory units are coupled with the word lines; the control gates of the memory units are coupled with the control gate lines; the control gates of the used memory units are coupled with the control gate lines in the control gate line structure; the control gates of the unused memory units are coupled with a preset voltage. By means of the EEPROM array and the EEPROM, the unused memory units in the EEPROM can be prevented from affecting the normal memory units.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an EEPROM storage array and the EEPROM. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (Electrically Erasable Programmable Read-Only Memory, EEPROM) is an electrically erasable semiconductor storage device with byte as the minimum modification unit. Compared with Erasable Programmable Read-Only Memory (EPROM), EEPROM does not need to use ultraviolet radiation to erase the information on the chip with a specific voltage to write new data. In operation It is very convenient, so it is widely used in BIOS chips and flash memory chips that need to be erased frequently, and gradually replaces some random access memory chips that need power-off retention, and even replaces some hard disk functions. [0003] In the existing EEPROM memory, according to the needs of circuit design, some memory cells will not be used. Since the reliability of thes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP