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Repairing and regeneration method for transparent conductive film and transparent conductive laminating body

A technology of transparent conductive film and transparent conductive layer, applied in the direction of conductive layer on insulating carrier, etc., can solve problems such as difficult to repair film defects

Active Publication Date: 2015-09-16
NAGASE CHEMTEX CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, ITO sputtered film is used as a transparent conductive film, but once a film defect occurs, it is difficult to repair and has to be discarded as a waste product
Therefore, there are problems in terms of productivity and cost

Method used

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  • Repairing and regeneration method for transparent conductive film and transparent conductive laminating body
  • Repairing and regeneration method for transparent conductive film and transparent conductive laminating body
  • Repairing and regeneration method for transparent conductive film and transparent conductive laminating body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0255] 100 parts of poly(3,4-ethylenedioxythiophene) polystyrenesulfonic acid (manufactured by Heraeus, Clevios PH1000), 14 parts of alkoxysilane oligomer (manufactured by Fuso Chemical Industry Co., Ltd., N-POS) 37 parts of 3-hydroxypropionitrile (manufactured by Tokyo Chemical Industry Co., Ltd., δD=17.2, δH=18.8, δP=17.6), 19 parts of 1% nitric acid, 255 parts of ethanol (manufactured by Nacalai Tesque, boiling point 78.4° C.), ion exchange 45 parts of water were mixed to obtain a composition for forming a transparent conductive film. Using the obtained composition for forming a transparent conductive film, a transparent conductive film was formed by the method described in 2-1. The film thickness of the obtained transparent conductive film was 0.05 μm.

[0256] In the transparent conductive film, as film defects, chips and foreign substances existing on the film surface were confirmed. The maximum length of the film defect portion was 20 μm. On this transparent conducti...

Embodiment 2

[0259] 80 parts of poly(3,4-ethylenedioxythiophene) polystyrenesulfonic acid (manufactured by Heraeus, Clevios PH1000), silver nanowires (manufactured by Starlight PMC, T-YP808, aspect ratio 230, solid content 1.0%) 50 parts, polyester resin (manufactured by Nagase ChemteX Co., Ltd., Gabusen ES-210, solid content 25%) 42 parts, pyrazole (manufactured by Tokyo Chemical Industry Co., Ltd., δD=20.2, δH=10.4, δP=12.4) 37 parts 190 parts of ethanol (manufactured by Nacalai Tesque, boiling point 78.4° C.), 10 parts of 2-propanol (manufactured by Sagane Bussan, boiling point 82.5° C.), and 100 parts of ion-exchanged water were mixed to obtain a composition for forming a transparent conductive film. Using the obtained composition for forming a transparent conductive film, a transparent conductive film was formed by the method described in 2-1. The film thickness of the transparent conductive film was 0.3 μm.

[0260]In the transparent conductive film, as film defects, defects existin...

Embodiment 3

[0263] 100 parts of poly(3,4-ethylenedioxythiophene) polystyrenesulfonic acid (manufactured by Heraeus, Clevios PH1000), polyester resin (manufactured by Nagase ChemteX, Gabusen ES-210, solid content 25%) 33 Parts, 255 parts of ethanol (manufactured by Nacalai Tesque, boiling point 78.4° C.), 45 parts of ion-exchanged water, polyether ester-modified hydroxyl-containing polydimethylsiloxane (manufactured by BYK Chemical Japan, BYK-375, no 25% of volatile components) were mixed in 0.5 parts to obtain a composition for forming a transparent conductive film. Using the obtained composition for forming a transparent conductive film, a transparent conductive film was formed by the method described in 2-1. The film thickness of the transparent conductive film was 0.5 μm.

[0264] In the transparent conductive film, foreign substances and defects present in the film or at the interface between the film and the base material were confirmed as film defects. The maximum length of the fi...

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Abstract

The invention provides a repairing and regenerating method for a transparent conductive film and a transparent conductive laminating body. A method for repairing and regenerating a transparent conductive film by making the defect part of the film invisible when the defect part of the film exists in a full length scope and a transparent conductive laminating body having a transparent conductive film repaired and regenerated through the method are provided. The invention further relates to a repairing and regenerating method for a transparent conductive film. The method includes accumulating transparent resin layer on a recessed portion layer on the transparent conductive film, coating a composition for the transparent conductive film containing conductive material to form the transparent conductive film arranged on at least one surface of a substrate, and pressurizing the defect transparent film to form at least one of a recessed set with the total length of the recessed portion of 10-300 micrometers, wherein the recessed portion is selected from recessed portion due to substrate shape, damage or defect of the transparent conductive film and recessed portion formed due to removal of impurities from the transparent conductive film.

Description

technical field [0001] The present invention relates to a method for repairing and regenerating a transparent conductive film and a transparent conductive laminate. Background technique [0002] Although transparent conductive films are used in display devices such as smartphones, various film defects may occur in the process of forming the transparent conductive film or in the process of assembling to the display device. In particular, when dents are formed in the transparent conductive film with a size larger than a certain size, or foreign matter or air bubbles are mixed into the transparent conductive film during the formation of the transparent conductive film, even if the display device is directly formed in this way, these film defects will be clear. be seen. Generally, an ITO sputtered film is used as a transparent conductive film, but once a film defect is produced, it is difficult to repair and has to be discarded as a waste product. Therefore, there are problems...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14
Inventor 大堀达也久留岛康功常田义真
Owner NAGASE CHEMTEX CORPORATION