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Manufacturing method of semiconductor device and semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as semiconductor device thinning

Active Publication Date: 2019-02-15
KIOXIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in order to reduce the size of the semiconductor device, for example, it is necessary to reduce the area of ​​the substrate on which the laminate is placed and to make the semiconductor device thinner.

Method used

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  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0021] figure 1 It is a flowchart showing an example of a method of manufacturing a semiconductor device. figure 1 The example of the manufacturing method of the semiconductor device includes at least: a preparation step (S1-1), preparing a semiconductor substrate; a lamination step (S1-2), forming a laminate by laminating a plurality of semiconductor chips on the semiconductor substrate; The first sealing step (S1-3) is to form a sealing resin layer covering between the plurality of semiconductor chips and the side surfaces of the plurality of semiconductor chips on the semiconductor substrate; the first separation step (S1-4) is to separate the semiconductor layer corresponding to the laminate. substrate; mounting step (S1-5), mounting the laminate on the wiring substrate; second sealing step (S1-6), forming a sealing resin layer that seals the laminate; grinding step (S1-7), Grinding a part of the semiconductor substrate; a terminal forming step (S1-8), forming external co...

no. 2 Embodiment approach

[0052] In this embodiment, an example of a method for manufacturing a semiconductor device that differs in some steps from that of the first embodiment will be described.

[0053] Figure 7 It is a flowchart showing an example of a method of manufacturing a semiconductor device. Figure 7 The example of the manufacturing method of the semiconductor device shown includes: a preparation step (S2-1), preparing a semiconductor substrate; a lamination step (S2-2), forming a laminate by laminating a plurality of semiconductor chips on the semiconductor substrate; 1 Sealing step (S2-3), forming a sealing resin layer on the semiconductor substrate to cover between the plurality of semiconductor chips and the side surfaces of the plurality of semiconductor chips; 1st grinding step (S2-4), grinding the semiconductor substrate Part; the first separation step (S2-5), separating the semiconductor substrate corresponding to the laminate; the mounting step (S2-6), mounting the laminate on t...

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PUM

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Abstract

The present invention relates to a method for manufacturing a semiconductor device and the semiconductor device, which provide a semiconductor device with a smaller size. Grooves are formed on the surface of the semiconductor substrate in a lattice shape, and a laminate is formed by laminating a plurality of semiconductor chips in the area surrounded by the grooves on the semiconductor substrate, and a plurality of semiconductor chips and a plurality of semiconductor chips are formed in the area surrounded by the grooves. The first sealing resin layer on the side surface of each semiconductor chip is separated from the semiconductor substrate corresponding to the laminated body, and the laminated body is mounted on the wiring substrate in such a manner that the semiconductor chip is positioned on the wiring substrate side to form a sealing product on the wiring substrate. The second sealing resin layer of the layered body, and the wiring board is separated corresponding to the laminated body. After the first sealing resin layer is formed and before the wiring board is separated, from the opposite surface of the semiconductor substrate where the laminated body is formed, along the thickness Orientation grinding of a portion of a semiconductor substrate.

Description

[0001] [Related applications] [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2014-52716 (filing date: March 14, 2014). This application includes the entire content of the basic application by referring to this basic application. technical field [0003] The invention of the embodiment relates to a method of manufacturing a semiconductor device and the semiconductor device. Background technique [0004] In recent years, with the development of communication technology and information processing technology, reduction in size and speed of semiconductor devices are required. In order to cope with this, the development of a semiconductor package for the purpose of reducing the length of wiring between parts by three-dimensional mounting in which a plurality of semiconductor chips are stacked to cope with an increase in operating frequency is being promoted in semiconductor devices, and Improve installation area ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L23/28
CPCH01L25/074H01L25/50H01L2224/16145H01L2224/13H01L25/0657H01L23/3121H01L23/3135H01L21/561H01L24/16H01L2224/16146H01L2224/16225H01L2224/1703H01L2224/2919H01L2224/32225H01L2224/73253H01L2924/00014
Inventor 佐藤隆夫
Owner KIOXIA CORP