Reading circuit of non-volatile memory capable of preventing side channel attack
A memory read and bypass attack technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as read bypass signal leakage, unacceptable array area, and extended read time
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[0063] The specific implementation of the present invention will be further described in detail below in conjunction with the examples.
[0064] Figure 7 is based on Figure 4 A specific embodiment of the first circuit structure proposed by the present invention is shown, taking a resistive memory as an example, and focusing on an implementation of a voltage difference amplifier circuit. Figure 7 Among them, the storage unit 701 is a 1T1R unit composed of a transistor and a resistive unit R connected in series, and the reference unit 702 in the on state is a reference unit composed of a transistor connected in series with a resistive unit RL preset to low resistance. Unit, the reference unit 703 in the non-conducting state is a reference unit composed of a transistor connected in series with a resistive switching unit RH preset to high resistance.
[0065] The voltage difference amplifying circuit 707 includes an inverter Inv1 721 whose inversion voltage is specially adjus...
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