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A method and detection equipment for detecting the influence of self-return light on lasers

A detection device and a technology for detecting light, which are applied in the field of optics, can solve the problems of semiconductor laser laser power drop, affecting the quality of semiconductor laser laser beams, and burning out laser chips.

Active Publication Date: 2016-07-27
MAXPHOTONICS CORP
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Problems solved by technology

[0003] However, when the semiconductor laser is working, part of the laser light emitted by itself will return to the inside of the laser chip along the original path, causing the laser power of the semiconductor laser to drop, affecting the quality of the laser beam of the semiconductor laser, and even burning out the laser chip in severe cases. , causing the laser to be scrapped

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  • A method and detection equipment for detecting the influence of self-return light on lasers
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  • A method and detection equipment for detecting the influence of self-return light on lasers

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Embodiment Construction

[0028] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0029] see figure 1 , the methods used to detect the influence of self-return light on the laser include:

[0030] Step S201: receiving input light from a laser.

[0031] In this embodiment, the laser means that the core pump source part of the laser does not contain other optical devices, such as a laser chip.

[0032] Step S202: Divide the input light into the first detection light and the second detection light, and output the first detection light and the second detection light to the first optical power meter and the adjustable mirror respectively, wherein the power of the first detection light A first predetermined relationship is satisfied with the power of the input light.

[0033] Splitting the input light into the first detection light and the second detection light is divided according to predetermined requirements. Therefore, except tha...

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Abstract

The invention discloses a method and detection equipment for detecting the influence of self-return light on a laser. The method includes: receiving the input light input by the laser; An optical power meter and an adjustable reflector output the first detection light and the second detection light; receive part of the second detection light reflected by the adjustable reflector, and divide the part of the second detection light reflected by the adjustable reflector into The first return light and the second return light, and return the first return light and the second return light to the laser and the first optical power meter respectively; detect the power of the first detection light through the first optical power meter, and pass the second light The power meter detects the power of the second return light; calculates the power of the input light of the laser and the power of the first return light, and establishes a power correspondence between the power of the first return light and the power of the input light of the laser. Through the above method, the present invention can detect the corresponding relationship between the power of the returning light and the power of the input light of the laser.

Description

technical field [0001] The invention relates to the field of optical technology, in particular to a method and detection equipment for detecting the influence of self-reflected light on a laser. Background technique [0002] Semiconductor lasers are lasers that use semiconductor materials as the working substance. They have the advantages of small size, high efficiency, simple structure, long life, easy modulation and low price, and are widely used in the electronic field. [0003] However, when the semiconductor laser is working, part of the laser light emitted by itself will return to the inside of the laser chip along the original path, causing the laser power of the semiconductor laser to drop, affecting the quality of the laser beam of the semiconductor laser, and even burning out the laser chip in severe cases. , causing the laser to be scrapped. However, different chips and different packaging modes of semiconductor lasers have different effects of the returned light...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01M11/02
CPCH01S5/0656H01S5/0014H01S5/0064H01S5/0071
Inventor 周少丰黄良杰李凯蒋峰
Owner MAXPHOTONICS CORP