The invention provides a single
diffusion isolation method of a fin type
field effect transistor. The method comprises the following steps: forming an annular
semiconductor fin body on a substrate; forming a single-
diffusion isolation groove in the annular
semiconductor fin body through an
etching process to isolate a plurality of
semiconductor fin body units; forming a
protection layer on the top surface, the
peripheral side surfaces and the surface of the substrate of the semiconductor fin body unit; removing the semiconductor fin body unit needing to be
cut off through
etching, removing the second photoetching
mask and cleaning the semiconductor fin body unit; removing the edge of the semiconductor fin body unit through
etching; removing the protective layer; depositing an insulating
dielectric layer on the substrate; and carrying out planarization
processing on the insulating
dielectric layer. According to the invention, the uniformity and consistency of the fin body structure on the whole
chip can be ensured, and the overall performance of the
chip is improved. Meanwhile, by means of the manufacturing process, the problem of boundary
photoresist height difference caused by the fin
body area and the non-fin
body area on the surface of the substrate can be avoided, defects in the manufacturing process are reduced, and the product yield is improved.