3results about How to "Simple and symmetrical structure" patented technology

The present invention discloses an isolated high-frequency dual-active bridge converter based on gallium nitride devices, including: a high-voltage three-phase full-bridge circuit module, a low-voltage three-phase full-bridge circuit module, a three-phase energy transfer inductor, a three-phase high-frequency coaxial transformer and a DSP module; the isolated high-frequency dual-active bridge converter proposed by the present invention has a simple and symmetrical structure, wherein the power electronic switch adopts gallium nitride power devices, so that the switching frequency of the dual-active bridge converter can be increased to the range of 100kHz-1MHz, and the three-phase high-frequency coaxial transformer adopts a coaxial structure, which reduces the volume and weight of passive components, reduces electromagnetic interference, improves the power density of the converter, can transmit electric energy bidirectionally and can quickly switch the transmission direction. The embodiment of the present invention can provide high-frequency switching frequency and high power density in applications with strict restrictions on volume and weight, and solve the technical problems of relatively low switching frequency and large volume and weight of traditional dual-active bridge converters in the prior art.

The invention discloses a LTCC-type symmetrical non-reflection low-pass filter based on DGS, which belongs to the field of microwave technology. The non-reflection low-pass filter is composed of three symmetrical inductors, three capacitors and three resistors. The filter adopts a single shielding layer, and the shielding layer adopts a grid defect ground structure. It is realized by using LTCC process technology, and has the advantages of good stopband non-reflection performance, small component size, component high temperature resistance, low processing cost, good working stability, good material consistency, good environmental protection, etc. It can be widely used in 5G mobile communications in microwave bands, phased array radars, Beidou navigation systems and other satellite communications, and systems and equipment with high requirements on electrical properties, material consistency, thermomechanical properties, temperature stability, processability and anti-interference.

The application relates to a source adjustable resistance circuit for a high-speed differential amplifier, belonging to the technical field of high-speed analog and radio frequency integrated circuits, comprising a high-speed differential amplifier, a degeneration resistance unit and a control unit; the degeneration resistance unit is composed of a first MOS transistor; the source and the drain of the first MOS transistor are respectively connected to two source nodes of a differential pair transistor of the high-speed differential amplifier, serving as source degeneration resistance thereof, and the gate voltage of the first MOS transistor is generated by the control unit; the control unit is used for generating the gate control voltage of the first MOS transistor. The application replaces a large resistance array with a single MOS transistor, greatly reduces the area, greatly reduces the chip cost, significantly reduces the parasitic capacitance of the degeneration node to the ground, and improves the amplifier bandwidth.