AlGaN/GaN HETM small-signal model and parameter extraction method thereof

Abstract

The invention provides an AlGaN/GaN HETM small-signal model and a parameter extraction method thereof. The small-signal model comprises a parasitic part and an intrinsic part; and the intrinsic part comprises intrinsic capacitors including Cgd, Cgs and Cds, a gate-source leakage resistor Rgsf, a gate-drain leakage resistor Rgdf, a channel resistor Ri, a source-drain resistor Rds and a transconductor Gm. According to the invention, on the basis of the original AlGaN/GaN HETM small-signal model, the gate-drain leakage resistor Rgsf applicable to representing electric leakage between the gate and the drain and the gate-source leakage resistor Rgdf applicable to representing electric leakage between the gate and the source are additionally arranged; because unavoidable leakage current exists below the gate and at two sides of the gate when a device is in a normal working state, the characteristics of the device can be reflected more precisely after the two components are added, and therefore, the accuracy rate of a device model is improved.

Description

Technical field [0001] The invention belongs to the technical field of integrated circuits, and particularly relates to an AlGaN / GaNHETM small signal model and a method for raising parameters. Background technique [0002] In the entire process of microwave circuit design, the device model plays a key role in effectively linking the process, device and circuit design, and can accurately reflect the characteristics of the device in the circuit, complete the circuit simulation results, and predict the circuit characteristics , Evaluate the overall performance and yield of the circuit. The accurate small-signal model of the device provides necessary data for its corresponding large-signal characteristics analysis, and is an important means to predict the small-signal S-parameter characteristics of the device; the adoption of the accurate large-signal model of the device simplifies the radio frequency and The design steps of microwave and millimeter wave power circuits shorten the c...

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Problems solved by technology

[0005] figure 1 and figure 2 Although these two models in can generally reflect the characteristics of AlGaN / GaN HEMT devices into the circuit, but figure 1 The model in is relatively complex, and it takes time to raise parameters. At the same time, to evaluate the reliability of HEMT devices, the size of the gate leakage current is an indicator that cannot be ignored, which affects the accuracy of the model, but these two models are not very good. Characterization of device leakage characteristics

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