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A kind of carbon nanotube flexible photosensitive device and its preparation method
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A technology of photosensitive devices and carbon nanotubes, which is applied in the direction of nanotechnology, nanotechnology, semiconductor devices, etc., can solve the problems of difficult removal of metallic carbon nanotubes, complicated process preparation process, large manufacturing process deviation, etc., to achieve photosensitive performance and Excellent electrical properties, excellent photosensitivity, and low cost
Active Publication Date: 2017-03-01
TSINGHUA UNIV
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However, a very important problem of this method is the directional growth of carbon nanotubes, and it is difficult to remove the metallic carbon nanotubes during the growth alignment process.
This method is based on traditional silicon-based materials, which do not have the characteristics of flexibility, the process preparation process is complicated, and the manufacturing process has large deviations.
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preparation example Construction
[0051] The preparation method of the carbon nanotube flexible photosensitive device of the present invention, as shown in Figure 2, mainly comprises the following steps:
[0052] 1) On a silicon wafer substrate 9 with a thickness of 300-600 um, a silicon dioxide layer 8 of 200-300 nm is thermally oxidized and grown;
[0053] 2) Spin-coat a layer of 20-30 μm polyimide (PI) or polydimethylsiloxane (PDMS) polymer film on the silicon substrate 9 growing the silicon oxide layer 8 as the flexible support layer 1;
[0054] 3) Magnetron sputtering or electron beam evaporation of a silicon dioxide film with a thickness of 10-20 nm on the silicon wafer substrate prepared with a flexible support layer as the flexible buffer layer 2;
[0055] 4) On the silicon dioxide flexible buffer layer, the square resistance is 6-10Ω / cm prepared by magnetron sputtering or electron beam evaporation 2 ITO, or spin-coating a silver nanowire network with a particle size of 50-100nm and a length of 15-20u...
Embodiment 1
[0063] This embodiment is used to prepare carbon nanotube flexible photosensitive devices, and the specific process flow is as follows:
[0064] 1) On a silicon wafer substrate 9 with a thickness of 300-600 um, a silicon dioxide layer 8 of 200-300 nm is thermally oxidized and grown;
[0065] 2) On the silicon substrate 9 on which the silicon oxide layer 8 is grown, spin-coat a layer of 20-30 μm polyimide (PI) film as the flexible supporting layer 1;
[0066] 3) Magnetron sputtering or electron beam evaporation of a silicon dioxide film with a thickness of 10-20 nm on the silicon wafer substrate prepared with a flexible support layer as the flexible buffer layer 2;
[0067] 4) The square resistance of magnetron sputtering on the silicon dioxide flexible buffer layer is 6-10Ω / cm 2 The ITO used as the flexible back gate electrode layer 3;
[0068] 5) A layer of 10-20nm thick metal oxide HfO is grown on the substrate with the prepared flexible back gate electrode by low-temperat...
Embodiment 2
[0074] This embodiment prepares a carbon nanotube photosensitive device, which is basically the same as Embodiment 1, except that step 4) adopts the technology of spin-coating silver nanowire network to prepare flexible back gate electrode layer 3, whose particle size is 50-100nm, and the length is 15-20um, the silver nanowire network has better conductivity, and it has better flexibility than ITO.
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Abstract
The present invention relates to a carbon nano tube flexible photosensitive device and a manufacturing method thereof, and belongs to the field of flexible electronic technology and sensitive electronics. The photosensitive device comprises a flexible substrate, a flexible support layer, a flexible buffer layer, a flexible back-gate electrode layer, a flexible back-gate dielectric layer, a graphical flexible carbon nano tube photosensitive film channel layer, a graphical metal source electrode formed on a photosensitive channel and a graphical metal drain electrode also formed on the photosensitive channel, which are stacked in turn. An organic high polymer flexible material serves as the substrate of the photosensitive device, and a flexible gate medium material, metal electrodes and carbon nano tube film photosensitive films are adopted, thus to realize flexibility of the photosensitive device. The photosensitive film channel layer adopts a carbon nano tube network structure, has the characteristics of simple techniques and film formation at indoor temperature, and thus is suitable for manufacture of flexible sensors. In addition, carbon nano tubes also have excellent electrical and optical properties, and efficient and rapid detection of light can be realized.
Description
technical field [0001] The invention belongs to the technical field of flexible electronics and sensitive electronics, and in particular relates to a carbon nanotube flexible photosensitive device and a preparation method thereof. Background technique [0002] Semiconductor photosensitive device is a photosensitive device using semiconductor as photosensitive material. Due to its advantages of high sensitivity, fast response speed, small size, light weight, easy integration, intelligence, and integration of detection and conversion, since its inception, The variety of products continues to increase, and the application fields continue to expand. It has important applications in automation, remote sensing, environmental pollution detection, and medical biology. Commonly used semiconductor materials include silicon, III-V and II-VI element compounds, organic polymer semiconductor materials, and new low-dimensional semiconductor materials. When preparing a photosensitive devic...
Claims
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