Organic ferroelectric gate graphene flexible storage device and manufacturing method thereof
A storage device and graphene flexibility technology, which is applied to the organic ferroelectric gate graphene flexible storage device and its manufacturing field, can solve the problems of complex preparation process of charge trap memory, damage to storage cells, limited erasing and rewriting times, etc. performance, high mobility, low operating voltage effects
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[0048] The preparation method of the organic ferroelectric grid graphene flexible storage device of the present invention, as shown in Figure 2, mainly comprises the following steps:
[0049] 1) The square resistance of magnetron sputtering on a flexible substrate 1 with a thickness of 100-200um is 6-8Ω / cm 2 ITO or 50-100nm metal aluminum Al can also be spin-coated with a silver nanowire network with a particle size of 50-100nm and a length of 15-20um, or spin-coated with a carbon nanotube dispersion to form a carbon nanotube conductive film as a back gate electrode 2;
[0050] 2) On the flexible substrate 1 with the back gate electrode 2 prepared, a layer of metal oxide is grown by atomic layer deposition (ALD) as the back gate dielectric 3, and the metal oxide used includes HfO 2 、TiO 2 and Al 2 o 3 etc., the thickness is 15nm;
[0051] 3) transfer the graphene grown by chemical vapor deposition (CVD) to the flexible substrate with the back gate dielectric 3 as the cond...
Embodiment 1
[0058] This embodiment is used to prepare an organic ferroelectric gate graphene flexible storage device, and the specific process flow is as follows:
[0059] 1) The square resistance of sputtering on a flexible PET substrate 1 with a thickness of 100-200um is 6-8Ω / cm 2 The ITO back gate electrode 2;
[0060] 2) ALD method is used to grow 15nm thick HfO on the back gate electrode 2 2 As a back gate dielectric 3;
[0061] 3) transfer the single-layer graphene grown by CVD to the flexible PET substrate with the back gate dielectric 3 as the conductive channel 4;
[0062] 4) Depositing a metal Cr / Au stacked structure on the graphene as the source-drain electrodes 5 and 6 by photolithography and electron beam evaporation processes, with a thickness of 10-20nm / 50-60nm;
[0063] 5) Then perform secondary photolithography, and use an oxygen ion etching process to pattern the graphene conductive channel 4 to form a patterned conductive channel 4 .
Embodiment 2
[0067] This example prepares an organic ferroelectric grid graphene flexible storage device, which is basically the same as Example 1, except that step 1) adopts the process of spin-coating silver nanowire network to prepare the back gate electrode 2, and its particle size is 50-100nm. With a length of 15-20um, the silver nanowire network has better electrical conductivity, and has better flexibility than ITO.
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