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Organic iron electric grid grapheme flexibility memory device and manufacturing method thereof

A storage device, organic iron technology, applied in the field of organic ferroelectric gate graphene flexible storage devices and its manufacturing, can solve the problems of complex preparation process of charge trap memory, limited erasing and writing times, and damage to memory cells, etc. Effects of Performance, Low Operating Voltage, and High Mobility

Inactive Publication Date: 2015-05-13
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, compared with ferroelectric memory, the preparation process of charge trap memory is more complicated, and charge trap technology is similar to floating gate memory, which requires the use of charge pump to generate high voltage, forcing current to pass through the gate oxide layer to achieve erasing The role of the erase and write delay
Moreover, higher write power and long-term write operations may destroy the memory cells, resulting in limited erasing times

Method used

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  • Organic iron electric grid grapheme flexibility memory device and manufacturing method thereof
  • Organic iron electric grid grapheme flexibility memory device and manufacturing method thereof
  • Organic iron electric grid grapheme flexibility memory device and manufacturing method thereof

Examples

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preparation example Construction

[0048] The preparation method of the organic ferroelectric grid graphene flexible storage device of the present invention, as shown in Figure 2, mainly comprises the following steps:

[0049] 1) The square resistance of magnetron sputtering on a flexible substrate 1 with a thickness of 100-200um is 6-8Ω / cm 2 ITO or 50-100nm metal aluminum Al can also be spin-coated with a silver nanowire network with a particle size of 50-100nm and a length of 15-20um, or spin-coated with a carbon nanotube dispersion to form a carbon nanotube conductive film as a back gate electrode 2;

[0050] 2) On the flexible substrate 1 with the back gate electrode 2 prepared, a layer of metal oxide is grown by atomic layer deposition (ALD) as the back gate dielectric 3, and the metal oxide used includes HfO 2 、TiO 2 and Al 2 o 3 etc., the thickness is 15nm;

[0051] 3) transfer the graphene grown by chemical vapor deposition (CVD) to the flexible substrate with the back gate dielectric 3 as the cond...

Embodiment 1

[0058] This embodiment is used to prepare an organic ferroelectric gate graphene flexible storage device, and the specific process flow is as follows:

[0059] 1) The square resistance of sputtering on a flexible PET substrate 1 with a thickness of 100-200um is 6-8Ω / cm 2 The ITO back gate electrode 2;

[0060] 2) ALD method is used to grow 15nm thick HfO on the back gate electrode 2 2 As a back gate dielectric 3;

[0061] 3) transfer the single-layer graphene grown by CVD to the flexible PET substrate with the back gate dielectric 3 as the conductive channel 4;

[0062] 4) Depositing a metal Cr / Au stacked structure on the graphene as the source-drain electrodes 5 and 6 by photolithography and electron beam evaporation processes, with a thickness of 10-20nm / 50-60nm;

[0063] 5) Then perform secondary photolithography, and use an oxygen ion etching process to pattern the graphene conductive channel 4 to form a patterned conductive channel 4 .

[0064] 6) Use the Sol-Gel meth...

Embodiment 2

[0067] This example prepares an organic ferroelectric grid graphene flexible storage device, which is basically the same as Example 1, except that step 1) adopts the process of spin-coating silver nanowire network to prepare the back gate electrode 2, and its particle size is 50-100nm. With a length of 15-20um, the silver nanowire network has better electrical conductivity, and has better flexibility than ITO.

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Abstract

The invention relates to an organic iron electric grid grapheme flexibility memory device and a manufacturing method thereof, and belongs to the flexible electronic technical field. The organic iron electric grid grapheme flexibility memory device comprises a flexible substrate, a metal back grid electrode layer, a metal oxide back grid dielectric layer and a graphical grapheme conductive channel, which are sequentially stacked, a metal source electrode and a metal drain electrode which are arranged on the graphical grapheme conductive channel, organic iron electric top grid dielectric smeared on back grid dielectric, the graphical grapheme conductive channel, the metal source electrode and the metal drain electrode in spin coating mode and a metal top grid electrode evaporated above the top grid dielectric. The organic iron electric grid grapheme flexibility memory device and the manufacturing method thereof use organic ferroelectric material as the grid dielectric, and then can achieve ferroelectric non-volatile data storage, and furthermore due to self flexibility and a low temperature film formation characteristic of the organic ferroelectric material, the organic ferroelectric material is suitable for preparation of the organic iron electric grid grapheme flexibility memory device. Simultaneously, grapheme is used as channel material, and therefore electrical performance of the organic iron electric grid grapheme flexibility memory device is greatly improved, and the organic iron electric grid grapheme flexibility memory device has the advantages of being simple in preparation technology, low in cost, and obtained under low temperature.

Description

technical field [0001] The invention belongs to the technical field of flexible electronics, and in particular relates to an organic ferroelectric grid graphene flexible storage device and a manufacturing method thereof. Background technique [0002] Semiconductor memory is a kind of memory that uses semiconductor circuits as storage media. Due to its advantages of small size, fast access speed, high storage density, and easy interface with logic circuits, since its inception, the variety of products has continued to increase and its application fields have continued to expand. . Semiconductor memory can be divided into two categories: the first category is volatile memory, and the second category is non-volatile memory. The characteristic of non-volatile memory is that the information stored in it still exists after power loss. At present, two new types of non-volatile memories are increasingly becoming the research focus of semiconductor memories, one is charge trap memo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L29/78H01L29/423H01L29/51H01L29/10H01L29/16H01L21/28H01L21/336H01L21/8247H10B53/30H10B69/00
Inventor 谢丹孙翊淋徐建龙张丞张小稳李娴赵远帆朱宏伟
Owner TSINGHUA UNIV