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Photoresist-removing stripper composition and method for stripping photoresist using same

A technology of composition and photoresist, applied in optics, photomechanical equipment, photosensitive material processing, etc., can solve problems such as process economy and efficiency reduction, environmental or process problems, etc.

Active Publication Date: 2015-12-09
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of this, in the prior art, in order to maintain excellent stripping performance and rinsing performance over time, a method of including an excessive amount of amine compound in the stripper composition is adopted, but in this case, the economical efficiency of the process and efficiency are significantly lower, and may cause environmental or process problems due to excess amine compounds

Method used

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  • Photoresist-removing stripper composition and method for stripping photoresist using same
  • Photoresist-removing stripper composition and method for stripping photoresist using same
  • Photoresist-removing stripper composition and method for stripping photoresist using same

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[0057] specific implementation plan

[0058] Hereinafter, the actions and effects of the present invention will be explained with reference to Examples and Comparative Examples. It should be noted that the examples are only for illustrating the present invention, and the scope of the present invention is not limited thereto.

[0059] Preparation of stripper composition for removing photoresist

[0060] According to the composition of Table 2 below, according to Examples 1 to 7 and Comparative Examples 1 to 3, the components were mixed to prepare a stripper composition for removing a photoresist.

[0061] [Table 2]

[0062]

[0063]

[0064] *LGA: imidazolyl-4-ethanol (IME)

[0065] *AEE: (2-aminoethoxy)-1-ethanol

[0066] *DMAC: Dimethylacetamide

[0067] *NMF: N-methylformamide

[0068] *DCA: N,N’-Diethylformamide

[0069] *DMF: N,N'-Dimethylformamide

[0070] *BDG: Diethylene glycol monobutyl ether

[0071] *MDG: Diethylene glycol monomethyl ether

[0072] *...

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Abstract

The present invention relates to: a photoresist removing stripper composition which does not comprise N-methylformamide, N,N′-dimethylcarboxamide, or the like, but which has outstanding stripping capacity and rinsing capacity, and which minimizes time-dependent deterioration of physical properties; and to a method for stripping a photoresist using the composition. The photoresist-removing stripper composition comprises: one or more types of amine compounds; N,N′-diethylcarboxamide; and a protic organic solvent of alkyleneglycol or alkyleneglycol monoalkylether.

Description

technical field [0001] The present invention relates to a stripper composition for removing a photoresist and a method for stripping a photoresist using the same, the stripper composition for removing a photoresist does not contain N having reproductive toxicity -Methylformamide or N,N'-dimethylformamide, etc., can still exhibit excellent stripping performance and rinse performance and minimize performance degradation over time. Background technique [0002] The microcircuit process of liquid crystal displays or the manufacturing process of semiconductor integrated circuits includes many methods for forming the following various bottom films: conductive metal films such as aluminum, aluminum alloys, copper, copper alloys, molybdenum, molybdenum alloys, etc.; or silicon oxide films , silicon nitride film, acrylic insulating film and other insulating films, the photoresist is evenly coated on this base film, and it is selectively exposed and developed to form a photoresist pat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/027
CPCG03F7/422
Inventor 郑大哲李东勋李佑然朴泰文
Owner LG CHEM LTD
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