Method for preparing rutile titanium dioxide nano-film by virtue of sol-gel method

The technology of rutile titanium dioxide and sol-gel method is applied in the field of preparing rutile titanium dioxide nano-film by sol-gel method, which can solve the problems of short precursor sol gelation time, difficulty in guaranteeing precursor consistency, and high waste rate of sol raw materials, and achieves The effect of stable structure, long gel time and lower production cost

Inactive Publication Date: 2015-12-23
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of preparing thin films by the sol-gel method, the gelation time of the precursor sol is short (1-2 days), and it is

Method used

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  • Method for preparing rutile titanium dioxide nano-film by virtue of sol-gel method
  • Method for preparing rutile titanium dioxide nano-film by virtue of sol-gel method
  • Method for preparing rutile titanium dioxide nano-film by virtue of sol-gel method

Examples

Experimental program
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Example Embodiment

[0016] Example 1

[0017] A kind of sol-gel method prepares the method for rutile titanium dioxide nano film, specifically comprises the following steps:

[0018] Step 1: Tetrabutyl titanate (Ti(OBu) 4 ) is a solute, and the mixed solution of monoethanol ammonia, ethylene glycol methyl ether and acetone is a solvent, and the concentration of tetrabutyl titanate for preparation is a precursor solution of 0.1mol / L; wherein, monoethanol ammonia, ethylene glycol methyl ether The volume ratio with acetone is 1:1:0.5;

[0019] Step 2: Add acetylacetone to the precursor solution obtained in step 1 as a chelating agent, glycerol as a tackifier, and magnetically stir at room temperature to obtain a transparent and uniform sol; wherein, the molar ratio of tetrabutyl titanate to acetylacetone It is 1:1, and the volume percentage of glycerol is 5%;

[0020] Step 3: Spin-coat the sol obtained in Step 2 on the cleaned silicon wafer at a spin-coating speed of 2000 rpm, and then dry it in ...

Example Embodiment

[0021] Example 2

[0022] A kind of sol-gel method prepares the method for rutile titanium dioxide nano film, specifically comprises the following steps:

[0023] Step 1: Tetrabutyl titanate (Ti(OBu) 4 ) is a solute, and the mixed solution of monoethanol ammonia, ethylene glycol methyl ether and acetone is a solvent, and the concentration of tetrabutyl titanate for preparation is a precursor solution of 0.2mol / L; wherein, monoethanol ammonia, ethylene glycol methyl ether The volume ratio with acetone is 1:1:0.5;

[0024] Step 2: Add acetylacetone to the precursor solution obtained in step 1 as a chelating agent, glycerol as a tackifier, and magnetically stir at room temperature to obtain a transparent and uniform sol; wherein, the molar ratio of tetrabutyl titanate to acetylacetone It is 1:3, and the volume percentage of glycerol is 5%;

[0025] Step 3: Spin-coat the sol obtained in Step 2 on the cleaned silicon wafer at a spin-coating speed of 3000 rpm, and then dry it in ...

Example Embodiment

[0026] Example 3

[0027] A kind of sol-gel method prepares the method for rutile titanium dioxide nano film, specifically comprises the following steps:

[0028] Step 1: Tetrabutyl titanate (Ti(OBu) 4 ) is a solute, and the mixed solution of monoethanol ammonia, ethylene glycol methyl ether and acetone is a solvent, and the concentration of tetrabutyl titanate for preparation is a precursor solution of 0.4mol / L; wherein, monoethanol ammonia, ethylene glycol methyl ether The volume ratio with acetone is 1:1:0.5;

[0029] Step 2: Add acetylacetone to the precursor solution obtained in step 1 as a chelating agent, glycerol as a tackifier, and magnetically stir at room temperature to obtain a transparent and uniform sol; wherein, the molar ratio of tetrabutyl titanate to acetylacetone It is 1:2, and the volume percentage of glycerol is 5%;

[0030] Step 3: Spin-coat the sol obtained in Step 2 on the cleaned silicon wafer at a spin-coating speed of 2000 rpm, and then dry it in ...

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Abstract

The invention relates to a method for preparing a rutile titanium dioxide nano-film by virtue of a sol-gel method, belonging to the technical field of film preparation. The method comprises the following steps: firstly preparing a precursor solution by taking tetrabutyl titanate (Ti(OBu)4) as a solute and taking mixed liquid of monoethanal amine, glycol methyl ether and acetone as a solvent, wherein the concentration of tetrabutyl titanate in the precursor solution is 0.1mol/L-1mol/L, and the volume ratio of monoethanal amine to glycol methyl ether to acetone is 1 to 1 to 0.5; adding acetylacetone as a chelating agent and glycerol as a thickening agent, and stirring, so as to obtain transparent and uniform sol; finally carrying out spin coating and high-temperature sintering, so as to obtain the rutile titanium dioxide nano-film on a silicon wafer. The method has the advantages that the cost is low, the process is simple, the repeatability is good, and the mass manufacturing can be realized.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a method for preparing a rutile titanium dioxide nano film by a sol-gel method. Background technique [0002] Nano-TiO 2 Semiconductor thin films have semiconductor properties such as photoelectric conversion and charge transport that are unmatched by other materials, and have been widely used in solar cells, sensors, photocatalysis and other fields. Titanium dioxide (TiO 2 ) has three crystal forms of brookite, rutile and anatase, among which rutile TiO 2 The most stable, both anatase and brookite can transform into rutile phase during high temperature sintering, rutile phase TiO 2 With large dielectric constant and small loss, it is an ideal material for making varistors for micro-motor noise reduction. [0003] At present, the preparation methods of titanium dioxide nano-film mainly include magnetron sputtering, electron beam evaporation, chemical vapo...

Claims

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Application Information

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IPC IPC(8): C04B41/50
Inventor 廖宇龙王晓艺张怀武钟智勇文天龙杨青慧
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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