Reactors for the production of polysilicon

A reactor and polysilicon technology, applied in the direction of silicon compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems that the silicon core cannot be controlled in circles, the growth of silicon rods is not uniform, and the heat utilization rate of the reactor is low. Uniform rod growth morphology, optimized surface morphology, and reduced invalid space

Active Publication Date: 2019-05-14
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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Problems solved by technology

[0011] The technical problem to be solved by the present invention is to provide a reduction furnace suitable for the production of polysilicon to solve the problems that the silicon core cannot be controlled in circles, the growth of silicon rods is not uniform, and the utilization rate of heat energy in the reactor is low.

Method used

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  • Reactors for the production of polysilicon
  • Reactors for the production of polysilicon
  • Reactors for the production of polysilicon

Examples

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Embodiment Construction

[0037] The reactor of the present invention will be described in detail below through specific examples with reference to the accompanying drawings, but these examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0038] figure 1 It is a vertical cross-sectional schematic diagram of a reactor for producing polysilicon in the present invention. like figure 1 As shown, the reactor 1 mainly includes a bell-type furnace tube 11, a chassis 12, a silicon core seat (electrode) 13, a silicon core 14, a beam silicon rod 17, a raw material inlet 15 and an exhaust gas outlet 16. The bell-type furnace drum 11 is fixed on the chassis 12 by fixing members (such as bolts), and forms a seal with each other. Silicon core seat (electrode) 13 , silicon core 14 , beam silicon rod 17 , raw material inlet 15 , and exhaust gas outlet 16 are located in the enclosed space surrounded by cylinder 11 and chassis 12 . The silicon core seat 13 is ...

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Abstract

The invention discloses a reactor for producing polysilicon, which includes a furnace cylinder containing cooling facilities, a chassis, electrodes located on the chassis, raw material inlets and exhaust ports, and is characterized in that except for the outermost Outside the electrodes of the furnace drum, each electrode has four or five other adjacent electrodes and one or two adjacent air inlets and / or exhaust ports at 150mm~300mm, the electrodes, air inlets and The lattice formed by the central points of the exhaust port is arranged in a regular triangle and / or approximately regular triangle lattice. The invention can realize denser arrangement of silicon cores, improve the utilization rate of heat energy in the reduction furnace, and realize more uniform flow field distribution, thereby increasing the output of polysilicon in each furnace, improving the surface quality of products, and reducing energy consumption.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a reduction furnace for improving the Siemens process to produce polysilicon. Background technique [0002] At present, the improved Siemens process is the most widely used polysilicon production method. The principle of the Siemens process is to use a high-temperature reduction deposition process. A silicon core with a thickness of about 8mm connected to the electrode is used as a deposition substrate, and high-purity SiHCl 3 as material, in high-purity H 2 High temperature reduction deposition in the atmosphere to generate polysilicon. [0003] The so-called bell jar reactor is a sealed structure, the chassis electrode is connected with a silicon core with a diameter of 5-10mm and a length of 1500-3000mm, and the silicon core seat on the electrode is clamped (also known as "graphite card flap" component) Fixed, the upper ends of the two silicon rods on each pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/035
Inventor 江宏富钟真武陈文龙王小军吴锋陈其国
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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