Apparatus and method for treating semiconductor wafer surface with ozone-containing fluid

Abstract

The invention discloses a device and a method for treating the surface of a semiconductor wafer with an ozone-containing fluid. The device includes an ozone generator, a solvent bottle, a gas-liquid mixing device, a closed cavity, a gas-liquid delivery system, and a gas-liquid discharge system; the ozone generator and the solvent bottle are respectively connected to the corresponding inlets of the gas-liquid mixing device , the outlet of the gas-liquid mixing device is connected with at least one inlet of the closed chamber; the closed chamber adopts a micro-processing chamber, and the micro-processing chamber includes an upper chamber part and a lower chamber part matched with each other. In the present invention, the ozone-containing gas-liquid mixed fluid or ozone-containing solution and ozone gas are input into a closed cavity, and the partial pressure of ozone in the gas phase is increased to shorten the time from generation to use of ozone and ensure the concentration of ozone in the solution. Concentration, thereby improving the treatment effect of the ozone-containing fluid on the surface of the wafer placed in the closed chamber; at the same time, the consumption of gas and liquid used is reduced through the design of the micro-processing chamber, and emissions are reduced.

Description

technical field [0001] The invention relates to a manufacturing process of semiconductor materials, in particular to a device and method for treating the surface of a semiconductor wafer with an ozone-containing fluid. Background technique [0002] In the semiconductor manufacturing process, in order to prepare an ultra-clean semiconductor wafer surface, various chemical liquids or gases are usually used for cleaning according to different process requirements. At present, most of the cleaning processes are still based on the traditional RCA cleaning formula (referred to as SC1 and SC2 cleaning solution) and the cleaning solution (referred to as SPM) mixed with sulfuric acid and hydrogen peroxide. The cleaning solution mixed with sulfuric acid and hydrogen peroxide is used to remove organic pollutants on the surface of the wafer, remove the photoresist on the surface of the wafer and form a thin oxide layer on the surface of the wafer, and the No. 1 cleaning solution mixed w...

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Problems solved by technology

The ozone concentration in the ozone aqueous solution will therefore decrease rapidly and continuously, which will affect the treatment effect

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