Na2In2GeSe6 nonlinear optical crystal and preparation method and use thereof

A nonlinear optics and crystal technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve problems affecting practical use, low optical damage threshold, slow development of nonlinear crystals, etc.

Active Publication Date: 2016-02-24
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the actual use

Method used

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  • Na2In2GeSe6 nonlinear optical crystal and preparation method and use thereof
  • Na2In2GeSe6 nonlinear optical crystal and preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Embodiment 1, adopt high temperature melt spontaneous crystallization method to prepare Na 2 In 2 GeSe 6 Crystal:

[0045] Weigh 1.249 g Na 2 Se, 4.665 g In 2 Se 3 and 2.306 g of GeSe 2 (i.e. Na 2 Se: In 2 Se 3 : GeSe 2 =0.01mol:0.01mol:0.01mol), after mixing evenly, put it into a quartz glass tube of Φ12mm×20mm, and evacuate to 10 -3 After that, it was packaged with an oxyhydrogen flame and placed in a tube growth furnace, slowly raised to 750°C, kept at a constant temperature for 72 hours, slowly cooled to room temperature at a rate of 1°C / h, and the tube growth furnace was closed; after the quartz tube cooled cut to get yellow Na 2 In 2 GeSe 6 crystals.

Embodiment 2

[0046] Embodiment 2, adopt crucible descending method to prepare Na 2 In 2 GeSe 6 Crystal:

[0047] Weigh 2.498 g Na 2 Se, 9.330 g In 2 Se 3 and 4.612 g of GeSe 2 (Na:In:Ge:Se=0.04mol:0.04mol:0.02mol:0.12mol), after mixing evenly, put it into a quartz glass tube of Φ25mm×200mm, and vacuumize it to 10 -3 After that, it is packaged with an oxyhydrogen flame and placed in a crystal growth furnace, and slowly raised to 750°C to melt the raw material. After the raw material is completely melted, the growth device drops vertically at a speed of 0.1-10mm / hour; after the crystal growth is completed, the growth The device is cooled to room temperature in 50 hours, and the yellow Na 2 In 2 GeSe 6 crystals.

[0048] After testing, the Na prepared by the above-mentioned embodiment 1-2 2 In 2 GeSe 6 The nonlinear optical crystal belongs to the orthorhombic crystal system, which belongs to the monoclinic crystal system, the space group is Cc, and its unit cell parameters are: ...

Embodiment 3

[0050] The Na obtained in embodiment 1-2 2 In 2 GeSe 6 The crystal is not easy to break, not easy to deliquescence, easy to cut, polish and store. With the Na of embodiment 1-2 gained 2 In 2 GeSe 6 crystal, placed in the attached figure 1 At the position marked 3 of the device shown, at room temperature, a Q-switched Ho:Tm:Cr:YAG laser is used as the light source, the incident wavelength is 2090nm infrared light, and the output wavelength is frequency-doubled light of 1045nm. The laser intensity is the same as AgGaSe 2 quite.

[0051] attached figure 1 Is the use of the present invention Na 2 In 2 GeSe 6 The working principle diagram of a typical nonlinear optical device made of nonlinear optical crystal, where 1 is the laser, 2 is the incident laser beam, 3 is the Na after crystal post-processing and optical processing 2 In 2 GeSe 6 Nonlinear optical crystal, 4 is the outgoing laser beam generated, 5 is a filter; the incident laser beam 2 is emitted by the laser...

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Abstract

A Na2In2GeSe6 nonlinear optical crystal and a preparation method and use thereof are disclosed; the Na2In2GeSe6 nonlinear optical crystal does not have the center of symmetry, belongs to monoclinic system, the space group is Cc, the unit cell parameters are as follows: alpha = gamma =90 degree, beta =108.70 degree, and Z= 4; the Na2In2GeSe6 can be grown by high-temperature melt spontaneous crystallization or crucible descending method; by the growth method of the Na2In2GeSe6 nonlinear optical crystal, the crystal is faster in growth rate and low in cost, a larger size crystal is easy to obtain; the resulting Na2In2GeSe6 nonlinear optical crystal has the advantages of large nonlinear optical effect, wide optical transparency band, large hardness, good mechanical properties, easy processing and the like; the Na2In2GeSe6 nonlinear optical crystal can be used to make non-linear optical components.

Description

technical field [0001] The present invention relates to a kind of Na 2 In 2 GeSe 6 Nonlinear optical crystals (Na 2 In 2 GeSe 6 single crystal) and the Na 2 In 2 GeSe 6 The preparation method of nonlinear optical crystal and the Na 2 In 2 GeSe 6 Use of nonlinear optical crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B11/00
CPCC30B11/00C30B29/46
Inventor 姚吉勇周墨林李超李小双张国春吴以成
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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