Na2In2GeSe6 nonlinear optical crystal and preparation method and use thereof

Abstract

A Na2In2GeSe6 nonlinear optical crystal and a preparation method and use thereof are disclosed; the Na2In2GeSe6 nonlinear optical crystal does not have the center of symmetry, belongs to monoclinic system, the space group is Cc, the unit cell parameters are as follows: alpha = gamma =90 degree, beta =108.70 degree, and Z= 4; the Na2In2GeSe6 can be grown by high-temperature melt spontaneous crystallization or crucible descending method; by the growth method of the Na2In2GeSe6 nonlinear optical crystal, the crystal is faster in growth rate and low in cost, a larger size crystal is easy to obtain; the resulting Na2In2GeSe6 nonlinear optical crystal has the advantages of large nonlinear optical effect, wide optical transparency band, large hardness, good mechanical properties, easy processing and the like; the Na2In2GeSe6 nonlinear optical crystal can be used to make non-linear optical components.

Description

technical field [0001] The present invention relates to a kind of Na 2 In 2 GeSe 6 Nonlinear optical crystals (Na 2 In 2 GeSe 6 single crystal) and the Na 2 In 2 GeSe 6 The preparation method of nonlinear optical crystal and the Na 2 In 2 GeSe 6 Use of nonlinear optical crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more...

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the actual use

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