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The control circuit of igbt for reverse conduction

A control circuit, control logic circuit technology, applied in the direction of electrical components, electronic switches, pulse technology, etc.

Active Publication Date: 2018-11-13
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This amount of charge is also called "reverse recovery" charge and has a huge influence on the diode turn-off losses as well as on the IGBT turn-on losses of the commutation partner (eg a further IGBT in the case of two IGBTs arranged in a half-bridge)

Method used

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  • The control circuit of igbt for reverse conduction
  • The control circuit of igbt for reverse conduction
  • The control circuit of igbt for reverse conduction

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Embodiment Construction

[0022] As already mentioned above, the conduction behavior of the individual diodes connected antiparallel to the IGBT shows no dependence on the control state of the IGBT. When using RC-IGBTs (reverse conducting IGBTs), the forward voltage drop across the emitter-collector load segment of the IGBT corresponding to the anode-cathode load segment of the integrated (intrinsic) diode rises by an undesired amount, As long as the gate of the RC-IGBT is conductively controlled in reverse-conducting operation and thus the MOS channel of the IGBT is conductive. Because the IGBT can transfer current in both directions, the electrons for the reverse current form an additional current path, parallel to the intrinsic diode, and no longer all electrons can contribute to the filling of the PIN diode structure, which leads to The voltage drop across the intrinsic diode is significantly increased.

[0023] Typical applications for RC-IGBTs are rectifiers, where they are used to control each ...

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Abstract

The invention relates to a control circuit for a reverse conducting IGBT. A control circuit for controlling a control electrode of a semiconductor switch is described. According to an example of the invention, the control circuit has: a first output node for connection to a control electrode of the semiconductor switch; a voltage supply circuit; and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. The control logic circuit is designed to generate control signals for controlling the first switching stage and the second switching stage, so that in a first operating mode of the semiconductor switch the semiconductor switch is controlled exclusively via the first resistor network, and in a second operating mode of the semiconductor switch is controlled exclusively via the second resistor network or both resistor networks.

Description

technical field [0001] The invention relates to a circuit arrangement and a method for controlling a reverse conducting IGBT, also known as RC-IGBT (reverse conducting insulated gate bipolar transistor). Background technique [0002] In the field of power electronics, transistors must be able to transmit current in the reverse direction for many applications. In the case of a MOSFET, the intrinsic diode of the MOSFET is used for this. Standard IGBTs cannot reverse conduct current without other devices due to their internal structure. If reverse conduction is required, the diode is usually connected in antiparallel with the IGBT device. However, this leads to some undesired consequences. The housing for the at least one IGBT must be selected correspondingly large so that there is room for the diode chips as well as the transistors. The wiring effort during bonding increases since a higher number of chips must now be interconnected. Further expenditures have to be run in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/567
CPCH03K2217/0036H03K17/567H03K17/163
Inventor D.多梅斯
Owner INFINEON TECH AG
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