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A kind of electrochromic multilayer transparent conductive film and preparation method thereof

A transparent conductive film, electrochromic technology, applied in cable/conductor manufacturing, conductive layer on insulating carrier, coating and other directions, can solve problems such as hindering Ag electron exchange, film loss of conductivity, etc., to achieve fast film growth rate , the effect of high coloring efficiency and low cost

Inactive Publication Date: 2019-01-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

WO 3 The work functions of Ag and Ag are 5.24eV and 4.4ev, respectively, which can meet this requirement; 3 , it is easily oxidized by high-energy oxygen ions to form Ag x O, whose work function is about 5.47-5.61eV, forms a surface barrier at the interface, hindering Ag and WO 3 The exchange of electrons between the films makes the film lose conductivity

Method used

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  • A kind of electrochromic multilayer transparent conductive film and preparation method thereof
  • A kind of electrochromic multilayer transparent conductive film and preparation method thereof
  • A kind of electrochromic multilayer transparent conductive film and preparation method thereof

Examples

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Embodiment 1

[0027] In this embodiment, an electrochromic multilayer transparent conductive film is provided, and its structure is as follows: figure 1 As shown, including the substrate, the first WO 3 Thin film layer, Ag conductive layer, W buffer layer and second WO 3 Thin film layer, first WO 3 Thin film layer, Ag conductive layer, W buffer layer and second WO 3 The thickness of the film layer is 45nm, 10-12nm, 2-3nm and 45nm respectively, and the substrate adopts standard electronic white glass.

[0028] Its preparation method comprises the following steps:

[0029] 1) Prepare the first WO 3 Thin film layer: evacuate the vacuum chamber (~5.0×10 -4 Pa), then pass in argon, adjust the argon pressure (1.0Pa), then turn on the radio frequency power switch, and then pass in oxygen after the target glows, adjust the flow of argon and oxygen (40:60sccm), so that the air pressure in the vacuum chamber is constant (4.0×10 -1 Pa), adjust the sputtering power (200W), and then perform pre-s...

Embodiment 2

[0035] The electrochromic multilayer transparent conductive film with the same structure as in Example 1 was prepared by the following steps, specifically:

[0036] 1) Prepare the first WO 3 Thin film layer: evacuate the vacuum chamber (~5.0×10 -4 Pa), then pass in argon, adjust the argon pressure (1.0Pa), then turn on the radio frequency power switch, and then pass in oxygen after the target glows, adjust the flow of argon and oxygen (40:60sccm), so that the air pressure in the vacuum chamber is constant (4.0×10 -1 Pa), adjust the sputtering power (200W), and then perform pre-sputtering cleaning (10 minutes) on the W target, then turn the substrate platform to the top of the target, adjust the sputtering time (18 minutes), and place on the glass substrate WO 3 film;

[0037] 2) Prepare the Ag conductive layer: adjust the argon flow rate (60sccm) to fix the air pressure in the vacuum chamber (3.4×10 -1 Pa), and then turn on the DC power switch. After the target glows, adj...

Embodiment 3

[0041] The electrochromic multilayer transparent conductive film with the same structure as in Example 1 was prepared by the following steps, specifically:

[0042] 1) Prepare the first WO 3 Thin film layer: evacuate the vacuum chamber (~5.0×10 -4 Pa), then pass in argon, adjust the argon pressure (1.0Pa), then turn on the radio frequency power switch, and then pass in oxygen after the target glows, adjust the flow of argon and oxygen (40:60sccm), so that the air pressure in the vacuum chamber is constant (4.0×10 -1 Pa), adjust the sputtering power (200W), and then perform pre-sputtering cleaning (10 minutes) on the W target, then turn the substrate platform to the top of the target, adjust the sputtering time (18 minutes), and place on the glass substrate WO 3 film;

[0043] 2) Prepare the Ag conductive layer: adjust the argon flow rate (60sccm) to fix the air pressure in the vacuum chamber (3.4×10 -1 Pa), and then turn on the DC power switch. After the target glows, adj...

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Abstract

The invention relates to a film and a preparation method thereof, and provides an electrochromic multilayer transparent conductive film and a preparation method thereof. The multilayer transparent conductive film includes a substrate, a first WO3 film layer arranged in sequence from top to bottom , Ag conductive layer, W buffer layer and the second WO3 thin film layer; its preparation method first prepares the first WO3 thin film layer on the substrate by reactive sputtering; then respectively through DC sputtering and magnetron sputtering on the first WO3 Prepare an Ag conductive layer and a W buffer layer on the surface of the thin film layer; finally prepare a second WO3 thin film layer on the surface of the W film layer by reactive sputtering. The present invention adopts the sputtering method to prepare the multilayer transparent conductive thin film structure and preparation process. DEK electrochromic multi-layer transparent conductive film, and the film has high transmittance in the visible light range, high electrical conductivity, and has a large adjustment range of visible light transmittance, high coloring efficiency, good cycle stability and environmental friendliness, etc. advantage.

Description

technical field [0001] The invention relates to a film and a preparation method thereof, in particular to an electrochromic multilayer stack structure transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive film is a photoelectric material that combines optical transparency and conductivity. Due to its excellent photoelectric properties, it has become a research hotspot and frontier topic in recent years. It can be widely used in solar cells, electrochromic, LED, TFT , LCD and touch screen and other fields. The most commonly used transparent conductive material is indium tin oxide (ITO), but due to the scarcity and rapid consumption of indium metal, the cost continues to rise, so it is urgent to find a relatively cheap alternative material. Among them, the dielectric-metal-dielectric (DMD) structure has excellent optical, electrical and structural properties (such as high electrical conductivity close to metal mater...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00C23C14/35C23C14/08C23C14/18C23C14/16
CPCC23C14/0036C23C14/083C23C14/165C23C14/185C23C14/35H01B5/14H01B13/00
Inventor 尹伊李春兰长勇郭华阳
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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