Solar cell containing P-type semiconductor electrode and fabrication method of solar cell

Abstract

The invention relates to a solar cell containing a P-type semiconductor electrode and a fabrication method of the solar cell. The solar cell sequentially comprises a negative electrode, a positive-negative (PN) junction silicon wafer and a positive electrode from a light incident surface to a backlight surface, wherein the negative electrode comprises a P-type semiconductor wafer on the light incident surface and a silver electrode plate on the backlight surface, and the P-type semiconductor wafer and the silver electrode plate are both connected with the light incident surface of the PN junction silicon wafer. The solar cell has the advantages that the light incident surface of the solar cell is large, and the fabrication method is simple.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a solar cell containing a P-type semiconductor electrode and a preparation method thereof. Background technique [0002] With the advent of the new century, the global economy is developing rapidly, human demand for energy continues to increase, and the extensive use of fossil fuels has led to a rapid shortage of energy and increasing environmental pollution. The world is facing a serious fact: energy The problem has become a hot spot and a difficult point in economic development. At present, the shortage of traditional energy sources and environmental pollution have become the main problems restricting economic development, and it is becoming more and more urgent to find non-polluting energy sources. Solar energy is a kind of energy produced by hydrogen nuclear fusion reaction, and the energy is quite huge. The energy irradiated on the earth every second can be equivalent to the heat...

Images