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A driving backplane and its preparation method and application

A technology for driving backplanes and substrates, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as lack of characteristics of thin-film transistors, and achieve the effect of low preparation cost and mature technology

Active Publication Date: 2019-02-19
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, what the present invention aims to solve is the problem of lack of thin film transistor characteristics in different regions of the existing driving backplane, and provides a driving backplane capable of meeting the characteristics of different regions and its preparation method and application

Method used

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  • A driving backplane and its preparation method and application
  • A driving backplane and its preparation method and application
  • A driving backplane and its preparation method and application

Examples

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Embodiment

[0036] This embodiment provides a drive backplane, such as Figure 25 As shown, it includes a polysilicon thin film crystal and an oxide thin film transistor C formed on a substrate 1 . As an embodiment of the present invention, in this embodiment, the polysilicon thin film transistor includes a P-channel transistor A and an N-channel transistor B; and a capacitor D is also included.

[0037] As a convertible embodiment of the present invention, the driving backplane may also include any one of the P-channel transistor A and the N-channel transistor B, both of which can achieve the purpose of the present invention and belong to the protection scope of the present invention.

[0038] In the drive backplane described in this embodiment, the oxide thin film transistor C can be used in the AA area where the mobility is not high, and the peripheral circuits such as GIP\EM have high mobility requirements, and the polysilicon thin film transistors A and B can be used to meet differen...

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Abstract

The invention discloses a drive backboard, which comprises a polysilicon thin film transistor and an oxide thin film transistor, wherein the polysilicon thin film transistor and the oxide thin film transistor are formed on a substrate. The requirement of an AA region on migration rate is low and the oxide thin film transistor can be adopted; and the requirements of peripheral circuits of a GIP / EM and the like on the migration rate are high and the polysilicon thin film transistor can be adopted, so that the characteristic requirements of different regions on the thin film transistors are met; and performance perfection and optimization of the drive backboard are achieved. The preparation method of the drive backboard disclosed by the invention overcomes the difference between different thin film transistors in the preparation process; and different thin film transistors are integrated on the same drive backboard, so that performance perfection and optimization of the drive backboard are achieved; the technology is mature; and the preparation cost is low.

Description

technical field [0001] The invention relates to the field of active matrix organic light-emitting display devices, in particular to a driving backplane and a preparation method and application thereof. Background technique [0002] Flat panel display devices have the characteristics of complete flatness, lightness, thinness, and power saving, and are an inevitable trend in the development of image displays. Most flat panel display devices are controlled by a matrix-driven backplane, so they are also called matrix-controlled flat-panel displays or matrix displays. [0003] In the prior art, backplane technologies mainly include amorphous silicon, polysilicon, and oxide semiconductors. All three have their own characteristics. Among them, amorphous silicon is the most widely used, with simple process, good uniformity, and low mobility; polysilicon has complex process, high mobility, and poor uniformity; oxide semiconductor has good uniformity, simple process, and high cost. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L21/77H01L27/1222H01L27/127H01L2021/775
Inventor 李勃
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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