A kind of terahertz semiconductor laser and its manufacturing method

Abstract

The invention relates to a terahertz semiconductor laser and a manufacturing method thereof. The terahertz semiconductor laser comprises a metal sub-wavelength grating layer, a semi-insulating substrate layer, a high-doped semiconductor layer and two table facets with same structures, wherein the two table facets are formed by deeply corroding an epitaxial layer; one of the table facets serves as an active area structure of the laser while the other table facet serves as a supporting table facet for a lower electrode; the functions of the two table facets are realized by only controlling the injection of the current through graph difference of an insulating layer. The terahertz semiconductor laser is based on an active-area horizontal area-selecting electroplating auxiliary radiating metal layer and imaging heat sinking flip-chip structure which can be used for improving the heat dissipation property of the active area of the component and conveniently forming substrate surface emission, so that the terahertz laser emission efficiency and light beam quality are increased.

Description

technical field [0001] The invention relates to the technical field of terahertz band light sources, in particular to a terahertz semiconductor laser and a manufacturing method thereof. Background technique [0002] Terahertz quantum cascade laser is a small, high-efficiency terahertz semiconductor laser source, which has important potential applications in astronomy, biomedicine, environmental science, safety detection, free space optical communication, etc. focus on. High output power, high operating temperature and good beam characteristics have always been important issues to be solved in the research of terahertz semiconductor lasers. Terahertz semiconductor lasers mainly use two waveguide structures: double-sided metal waveguides and semi-insulating plasma waveguides. Due to the high optical confinement factor of the double-sided metal waveguide structure, the lasing threshold of the laser is reduced, the injection power consumption is reduced, and the operating temp...

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Problems solved by technology

But on the other hand, this structure makes the upper and lower electrodes of the laser on the same side, and the laser is difficult to achieve flip-chip welding during packaging, and the thicker substrate affects the heat dissipation of the active area of ​​the device.

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