Manufacturing method of transistor and transistor

A manufacturing method and transistor technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of plating layer peeling, swelling, weak adhesion of the plating film, etc., and achieve the effect of stable action behavior

Active Publication Date: 2018-09-18
NIKON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the adhesive force between difficult-to-plate materials such as resin materials and glass and the formed plated film is weak, and the plated layer is easily peeled off due to internal stress of the plated film, swelling, etc.

Method used

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  • Manufacturing method of transistor and transistor
  • Manufacturing method of transistor and transistor
  • Manufacturing method of transistor and transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0133] (Fabrication of source and drain)

[0134] In this example, 3-aminopropyltriethoxysilane (KBE903, manufactured by Shin-Etsu Silicone Co., Ltd.), which is an amine-based silane coupling agent, was dissolved in methyl isobutyl ketone ( Hereinafter, sometimes referred to as MIBK), to prepare a liquid for the formation of basement membrane.

[0135] After the surface of a PET substrate (model: A-4100 (uncoated), manufactured by Toyobo Co., Ltd.) was cleaned with atmospheric pressure oxygen plasma, the above liquid was applied to the PET substrate by dip coating. The pulling speed of the dip coating was 1 mm / sec. Then, it heated at 105 degreeC for 15 minutes, and formed the base film.

[0136] Next, hexamethyldisilazane (12058-1A, manufactured by Kanto Chemical Co., Ltd.) was coated on the PET substrate on which the base film was formed by dip coating (pulling speed: 1 mm / sec). Thereafter, it was heated at 105° C. for 10 minutes to form a protective layer.

[0137] Next,...

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Abstract

The manufacturing method of the transistor of the present invention has following procedure: on the substrate (2) that has source (6), drain (7), semiconductor layer (9), cover semiconductor layer (9), form the fluorine-containing resin forming a first insulator layer (10) of material; covering the first insulator layer (10) to form a second insulator layer (11); forming a base film (12) on at least a part of the surface of the second insulator layer (11); After depositing a metal as a catalyst for electroless plating on the surface of the base film (12), the gate is formed on the surface of the base film by electroless plating, and the process of forming the base film (12) is to use the base film (12) The liquid (12S) of the forming material is coated on the surface of the second insulator layer (11). Compared with the first insulator layer (10), the second insulator layer (11) has Higher lyophilicity.

Description

technical field [0001] The present invention relates to a method of manufacturing a transistor and a transistor. [0002] This application claims priority based on Japanese Patent Application No. 2013-240560 for which it applied on November 21, 2013, and uses the content here. Background technique [0003] Conventionally, as a method of manufacturing transistors, the application of a solution process for low cost and large size has been studied. Transistors can be manufactured at lower temperatures than ever before using a solution process. In addition, a flexible organic transistor can also be manufactured by forming an organic semiconductor layer using an organic semiconductor material on a flexible substrate using a resin material. [0004] In such a method of manufacturing a transistor, electroless plating (electroless plating) which is a plating method utilizing reduction by contact action on the surface of a material can be used. Electroless plating does not use ele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336C23C18/31C23C18/32C23C28/00H01L21/28H01L21/288H01L21/3205H01L21/768H01L29/41H01L29/786H01L51/05
CPCC23C18/31C23C18/32C23C18/2086H10K10/471H10K10/474H10K10/481H10K10/464H01L29/4908H01L21/823462H01L21/823437H10K71/231H01L29/786
Inventor 小泉翔平杉崎敬川上雄介
Owner NIKON CORP
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