Check patentability & draft patents in minutes with Patsnap Eureka AI!

Pad design for electrostatic chuck surface

A technology of electrostatic chucks and chucks, which is applied in the direction of holding devices, circuits, and electrical components that apply electrostatic attraction, and can solve problems such as fracture, cracking, and damage

Active Publication Date: 2016-06-22
APPLIED MATERIALS INC
View PDF11 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Heat transfer that occurs at the contact area may exceed the physical limits of the substrate and / or chuck, causing cracking or fracture and potentially generating and depositing particles on the chuck surface that can cause further damage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pad design for electrostatic chuck surface
  • Pad design for electrostatic chuck surface
  • Pad design for electrostatic chuck surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] As mentioned above, non-uniform clamping forces on the substrate and non-uniform or excessive heat transfer between the substrate and the chuck can lead to particle generation at the substrate-chuck interface, which can lead to the damage or further wear to the base plate and chuck described above. Therefore, reducing the generation of particles at the interface between the electrostatic chuck and the substrate directly leads to reduced wear and longer operational life of these two components, as well as more consistent and desirable operation of the chuck. .

[0029] Particle generation can be reduced by adjusting several design or process parameters. For example, the chuck surface may be designed to reduce or minimize clamping substrate deformation, thereby reducing the probability of particle generation due to deformation of the substrate. Depending on other physical design parameters (eg, heat transfer gas flow), the chuck surface may adopt a specific contact arra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a pad design for electrostatic chuck surface. Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices.

Description

technical field [0001] Embodiments disclosed herein relate generally to fabricating electrostatic chuck surfaces; more specifically, embodiments disclosed herein generally relate to masks and patterns for electrostatic chucks. Background technique [0002] Electrostatic chucks are widely used to hold substrates such as semiconductor wafers during substrate processing in process chambers for various applications such as physical vapor deposition (PVD), etching or chemical vapor deposition. Electrostatic chucks typically include one or more electrodes embedded within a monolithic chuck body comprising a dielectric or semiconducting ceramic material on which an electrostatic clamping field can be generated. Semiconducting ceramic materials such as aluminum nitride, boron nitride or aluminum oxide doped with metal oxides can be used, for example, to enable the generation of a Johnson-Rahbek or non-Coulombic electrostatic clamp field. [0003] Variability in the chucking force ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02N13/00
CPCH01L21/6831H01L21/6875Y10T428/24298Y10T428/24314H01L21/467H01L21/56
Inventor 戈文达·瑞泽蔡振雄罗伯特·T·海拉哈拉凯瑟拉·拉马亚·纳伦德纳斯曼朱纳塔·科普帕罗斯·马歇尔
Owner APPLIED MATERIALS INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More