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Ion beam scanner, ion implanter and method of controlling a spot ion beam

A technology of ion beams and scanners, applied in the field of ion beam instruments, can solve problems such as large changes in target positioning

Active Publication Date: 2017-07-14
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For collimators that are not extensively reconfigured to properly collimate both beams, the targeting of the spot beam from the scanner may therefore vary too much from that of the ribbon beam

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  • Ion beam scanner, ion implanter and method of controlling a spot ion beam
  • Ion beam scanner, ion implanter and method of controlling a spot ion beam

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Embodiment Construction

[0017] The present embodiments are described more fully hereinafter with reference to the accompanying drawings, in which some embodiments are shown. The subject matter of the present disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the subject matter to those skilled in the art. In the drawings, the same reference numerals all represent the same elements.

[0018] This embodiment provides a novel dual platform scanner to perform ion beam scanning. The dual-stage scanner can be used to scan the ion beam to form a fan shape with the extent of ion trajectories received by the collimator and at the same time determine the common focal point of the scanned ion beam located outside the dual-stage scanner. In particular, this dual-stage scanner, as described in detail...

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Abstract

The invention provides an ion beam scanner, an ion implanter and a method for controlling point ion beams. The ion beam scanner includes a first scanning platform with a first opening to transmit the ion beam, the first scanning platform corresponds to the first oscillating deflection signal to generate a first oscillating deflection field in the first opening; the second scanning platform is arranged on Downstream of the first scanning platform and having a second opening to transmit the ion beam, the second scanning platform corresponds to the second oscillating deflection signal to generate a second oscillating deflection field in the second opening in a direction opposite to the first oscillating deflection field; and scanning A controller synchronizes the first oscillating deflection signal and the second oscillating deflection signal to generate a plurality of ion trajectories as the scanned ion beam exits the second scanning platform defining a common focal point. The technical solution of the present application makes it easier to operate a beamline ion implanter in both ribbon beam and spot beam modes, and does not require extensive reconfiguration when switching modes of operation.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Patent Application Serial No. 61 / 894,065 filed October 22, 2013. technical field [0003] The present embodiment relates to an ion beam instrument, and in particular relates to an ion beam scanner for controlling an ion beam, an ion implanter and a method for controlling a spot ion beam. Background technique [0004] To date, ion implanters have often been configured for a specific combination of applications to optimize implantation. In current applications, for example, some beamline ion implanters are configured to generate high current ribbon beams, where the profile of the beam intercepted by the substrate has a beam width that is much larger than the beam height. In some configurations, the beam width is only slightly larger than the dimension of the substrate in the plane of the substrate, for example 200 mm, 300 mm or 400 mm when the beam height is 10 mm, 20 m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317
CPCH01J37/3171H01J37/1475H01J37/3007H01J2237/08H01J2237/04H01J2237/31703H01J2237/30488H01J2237/303H01J2237/30455
Inventor 肯尼士·H·波什克里斯多夫·坎贝尔法兰克·辛克莱罗伯特·C·林德柏格约瑟·C·欧尔森
Owner VARIAN SEMICON EQUIP ASSOC INC