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A kind of flash memory preprocessing method and device

A preprocessing device and memory technology, applied in static memory, instruments, etc., can solve the problems of flash memory that cannot be tested, and achieve the effect of avoiding untestable

Active Publication Date: 2019-06-14
HUAWEI DIGITAL TECH SUZHOU
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can solve the problem that the flash memory cannot be tested due to peripheral interconnection problems in the prior art

Method used

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  • A kind of flash memory preprocessing method and device
  • A kind of flash memory preprocessing method and device
  • A kind of flash memory preprocessing method and device

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Embodiment Construction

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0048] seefigure 1 , which is a schematic flowchart of a flash memory preprocessing method provided by an embodiment of the present invention, the method comprising:

[0049] S101, select M addresses of the flash memory according to the method of step 1 to form the first address set, and burn mutually different data in the storage units corresponding to each address in the first address set; wherein, M is equal to all The number of address lines for the flash memor...

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Abstract

The embodiment of the invention discloses a preprocessing method and device for a flash memory. The preprocessing method includes: selecting M addresses of the flash memory according to the step 1 method to form the first address set, and burning different data in the storage units corresponding to each address; selecting the flash memory according to the step 0 method The M addresses of the memory form the second address set, and burn different data in the storage unit corresponding to each address; burn all 1s in the storage unit corresponding to the first random address, and burn all 1s in the storage unit corresponding to the second random address. Burn all 0s in the storage unit; select N addresses in the flash memory to form the third address set, and burn data in the storage units corresponding to each address according to the method of step 1; select N in the flash memory addresses form the fourth address set, and burn data in the storage units corresponding to each address according to the method of step 0. By adopting the invention, the reliability of the flash memory test can be improved.

Description

technical field [0001] The invention relates to the field of memory testing, in particular to a preprocessing method and device for a flash memory. Background technique [0002] The test of flash memory (English: Flash Memory, referred to as flash memory) generally adopts a "three-step method": write-read-back-comparison. The test method needs to write data into the storage unit in the flash memory, then read back the data in the storage unit, and compare the read back data with the written data to determine whether the address line or the data line is abnormal. Due to the special structure of the flash memory, a special command sequence must be sent to the Flash before writing data to the flash memory. For example, for a 16-bit flash memory, the command sequence that needs to be sent before the write operation is: to the address corresponding to address 0x5555 Write 0xAA to the storage unit, write 0x55 to the storage unit corresponding to address 0x2AAA, write 0xA0 to the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56
Inventor 杨华志
Owner HUAWEI DIGITAL TECH SUZHOU