OLED and its preparation method, and OLED display device

Abstract

Embodiments of the present invention relate to OLEDs, methods for preparing the same, and OLED display devices. The preparation method of the OLED includes: forming an anode, a cathode layer, and an intermediate layer between the anode and the cathode layer in the pixel limiting layer; forming a patterned first organic material layer on the cathode layer, and the first organic material layer is located in the OLED The pixel light-emitting area; on the first organic material layer, a patterned second organic material layer is formed, wherein the material of the second organic material layer is different from the material of the first organic material layer, and the first organic material layer is in the same shape as the OLED The projection in the direction perpendicular to the main plane overlaps with the projection of the second organic material layer in this direction; and the patterned first organic material layer and the patterned second organic material layer are formed on the cathode layer. An auxiliary electrode, wherein the projection of the auxiliary electrode in a direction perpendicular to the main plane of the OLED does not overlap with the projections of the first organic material layer and the second organic material layer in this direction.

Description

technical field [0001] Embodiments of the present invention generally relate to the fields of organic light-emitting display and lighting, and particularly relate to large-scale OLEDs, their preparation methods, and OLED display devices. Background technique [0002] Current active organic light-emitting diode (OLED) devices are generally controlled by thin-film transistors (TFTs). Therefore, if the OLED device of the bottom emission structure emits light in the form of bottom emission, the light emitted from the bottom will be blocked by the TFT and metal wire circuits formed on the substrate when passing through the substrate, so the actual light emitting area is limited, and the reduction can be reduced. The ratio of the light-emitting area is the so-called aperture ratio. In addition, in order to improve the luminance difference between pixels, many current OLEDs under research adopt a circuit-compensated pixel structure, and in these pixel structures, for example, a pi...

AI Technical Summary

Problems solved by technology

However, since the transparent metal oxide material needs to be prepared by a process such as sputtering, the energy during sputtering is relatively large, and it is easy to cause damage to the OLED device, which in turn affects the performance of the OLED device such as injection efficiency and lifetime.

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