Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon-based intermediate layer compositions and related methods

A silicon-based, middle-layer technology, applied in the direction of coating, patterned surface photolithography, instruments, etc., can solve problems such as degradation, lithography feature collapse, shrinking technology nodes and spacing, etc.

Active Publication Date: 2019-07-12
TAIWAN SEMICON MFG CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, using a three-layer photoresist film approach raises the challenge, especially with ever-shrinking technology nodes and pitches provided between features
The shrinking feature size and pitch can lead to collapse of lithographic features
This collapse may be due to degradation of adhesion between the top photoresist layer and the middle layer in a three-layer photoresist film scheme, and / or degradation of unintentional impurities

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon-based intermediate layer compositions and related methods
  • Silicon-based intermediate layer compositions and related methods
  • Silicon-based intermediate layer compositions and related methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] It should be understood that the following disclosure provides several different embodiments or examples for realizing different features of various embodiments. To simplify the present disclosure, specific examples of each device and layout are described below. Of course, these are examples only and are not intended to be limiting. For example, a first feature in this description built upon a second feature followed by formation of the second feature may include embodiments in which the first and second features are formed in direct contact; may also include implementations For example, the described embodiments have additional features formed between first and second features such that the first and second features are formed in indirect contact. Furthermore, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for simplicity and clarity and does not in itself imply a relationship between the various embodiments...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to silicon-based interlayer compositions and related methods. According to an embodiment of the present invention, a method for manufacturing a semiconductor device includes: forming a first material layer on a substrate, the first material layer including a silicon-based component having an alkyl group; directly forming on the first material layer a photoresist layer; and exposing the photoresist layer to a radiation source.

Description

technical field [0001] The invention relates to the technology in the semiconductor field, in particular to a semiconductor element and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced several generations of semiconductor integrated circuits, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of semiconductor integrated circuit processing and manufacturing, and similar developments in semiconductor integrated circuit processing and manufacturing are required in order to realize these advances. During the evolution of semiconductor integrated circuits, functional density (i.e., the number of interconnected devices per chip area) has generally increased, but geometric size (i.e., the smallest device that can be produced by a fabrication process)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027
CPCH01L21/0271H01L21/0272C09D183/04G03F7/0751G03F7/0752H01L21/02126H01L21/0332
Inventor 刘朕与张庆裕
Owner TAIWAN SEMICON MFG CO LTD