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Phase change memory device and manufacturing method thereof

A manufacturing method and storage device technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing manufacturing processes and manufacturing costs

Active Publication Date: 2019-01-18
北京时代全芯存储技术股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] As can be seen from the above, the known method of manufacturing phase change memory devices requires at least two masks, thus greatly increasing the manufacturing process and manufacturing cost

Method used

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  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof

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Embodiment Construction

[0040] Various embodiments of the present invention will be described in detail below and illustrated with accompanying drawings. In addition to the multiple detailed descriptions, the present invention can also be widely implemented in other embodiments, and any easy replacement, modification, and equivalent changes of any of the described embodiments are included in the scope of the present invention, and are subject to patent application. range prevails. In the description of the specification, many specific details are provided in order to enable readers to have a more complete understanding of the present invention; however, the present invention may still be practiced under the premise of omitting some or all of the specific details. Furthermore, well-known steps or elements have not been described in detail in order to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It should be n...

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Abstract

The invention discloses a phase change memory device manufacturing method. The method comprises steps: a substrate is provided, wherein the substrate comprises an access circuit, multiple bottom electrodes arranged in an array and multiple heaters, and the top surface of each heater is exposed; a dielectric layer is formed to cover the top surface of the heater; the dielectric layer is patterned to form multiple grooves, and the top surface of the heater is exposed via the multiple grooves; a first barrier layer is formed on one inner-side surface of the multiple grooves; a phase change material is deposited in the groove; part of the phase change material is removed to expose the first barrier layer located on one side wall of the groove; and a top electrode is formed in the groove to cover the phase change material. According to the above manufacturing method, one mask is only needed to complete manufacturing of the phase change memory device. The invention also discloses a phase change memory device.

Description

【Technical field】 [0001] The present invention relates to a storage device and its manufacturing method, in particular to a phase change storage device and its manufacturing method. 【Background technique】 [0002] The phase change memory device is a non-volatile random access memory. The phase change material in a phase change memory device can be switched between a crystalline state and an amorphous state by applying an appropriate electric current. Different states of phase change materials (eg, crystalline, semi-crystalline, amorphous, or semi-amorphous) represent different resistance values. Generally speaking, the amorphous state has a higher resistance value than the crystalline state, so data can be accessed by measuring the resistance value. [0003] A known method of manufacturing a phase change memory device such as Figure 1a to Figure 1d shown. First, fabricate the access circuit 11 on a substrate 10, then fabricate the bottom electrode 22 and the heater 23 on...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 陶义方
Owner 北京时代全芯存储技术股份有限公司