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A pyrolysis boron nitride container and a method of manufacturing the same

A manufacturing method and technology of boron nitride, applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of unobtainable single crystal and increased possibility, so as to achieve the goal of not easy to crack and reduce cost Effect

Active Publication Date: 2016-12-21
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the PBN film is peeled off, peeled off, etc. on the inner wall surface of the PBN crucible, there is a problem that the PBN film cannot be well covered. 2 o 3 part of the probability becomes greater
As a result, a grain boundary occurs starting from this point, and in the worst case, a fatal problem occurs that a single crystal cannot be obtained due to polycrystallization (Patent Document 2)

Method used

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  • A pyrolysis boron nitride container and a method of manufacturing the same
  • A pyrolysis boron nitride container and a method of manufacturing the same
  • A pyrolysis boron nitride container and a method of manufacturing the same

Examples

Experimental program
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Effect test

Embodiment 1～10、 comparative example 1

[0051] Towards figure 1 In the external heating type decompression chemical vapor deposition device 1 shown, a cylindrical graphite container mold material 4 of 150mmφ×200mmH and a corner portion of R20mm is loaded, and NH 3 with BCl 3 The reaction was carried out at 1800° C. under a vacuum of 2 Torr (267 Pa), and a PBN film with a film thickness of 1 mm was formed on the container mold material 4 . cooled to room temperature, such as figure 2 As shown, remove from the container mold material 4, make as image 3 The shown container-shaped PBN molded body 7 has an inner diameter of 150 mm, a height of 200 mm, and a corner portion of R20 mm.

[0052] The container-shaped molded body thus obtained was oxidized at 850° C. for 3 hours in the air to remove carbon transferred from the graphite container mold material and adhered to the inner wall surface. B at this time 2 o 3 The thickness of the layer is about 0.05 μm. Further, the inner wall surface was ground with #600 san...

Embodiment 11～20、 comparative example 2

[0059] In the same manner as in Examples 1 to 10, a container-shaped PBN molded body was produced, and then an oxidation treatment was performed at 1000° C. for 3 hours in the air to remove carbon transferred from the graphite mold and adhering to the inner wall surface. Furthermore, the corners of the inner wall surface were ground to a predetermined thickness with #600 sandpaper to produce various PBN containers (Examples 11 to 20).

[0060] For comparison, a PBN container (comparative example 2) was fabricated in the same manner as above except that removal by grinding was not performed.

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Abstract

A pyrolysis boron nitride container and a method of manufacturing the same are provided. The container is not liable to be demoulded or stripped, or the like and is suitable for culturing single crystals, and therefore the container and the method are provided. The method is a method for manufacturing the pyrolysis boron nitride container, and includes steps of preparing pyrolysis boron nitride into a film on a carbon-made container mould material through a thermal chemical vapor deposition process, removing the formed film from the container mould material to obtains a moulded part having a shape of the container, treating the moulded part having the shape of the container through oxidation to remove carbon derived from the container mould material and attached to the surface, and subjecting the moulded part having the shape of the container to thinning treatment from the side in contact with the mould material to form a container.

Description

technical field [0001] The invention relates to a method for manufacturing a pyrolysis boron nitride container, in particular to a method for manufacturing a pyrolysis boron nitride container and a pyrolysis boron nitride container. The method for manufacturing a pyrolysis boron nitride container is most suitable for A large crucible used when growing a III-V compound semiconductor single crystal, or a crucible for melting aluminum used in vacuum evaporation or molecular beam epitaxy (MBE), or the like. Background technique [0002] In the pulling of III-V compound semiconductor single crystals, for example, GaAs single crystals and InP single crystals, the following various methods are used: Horizontal Bridgman method (Horizontal Bridgman method; HB method), horizontal temperature gradient solidification method (Gradient solidification method; GF method), liquid seal pulling method (liquid seal Czochralski method; liquid sealCzochralski method; LEC method), vertical Bridgma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/56C23C16/44
CPCC23C16/342C23C16/44C23C16/56C23C16/01C04B35/583
Inventor 狩野正树
Owner SHIN ETSU CHEM IND CO LTD
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