Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

On-line measurement method and measurement device for residual stress of conductive thin film material

A residual stress, conductive film technology, used in measuring devices, force/torque/work measuring instruments, and using stable tension/pressure to test the strength of materials, etc., to simplify the measurement process, high measurement efficiency, and ensure real-time effects.

Active Publication Date: 2018-03-20
SOUTHEAST UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the measurement structure is usually only designed for the state of tensile stress or only for the state of compressive stress, and it cannot be measured under the condition of unknown material parameters, unknown residual stress and positive or negative (tensile stress or compressive stress)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • On-line measurement method and measurement device for residual stress of conductive thin film material
  • On-line measurement method and measurement device for residual stress of conductive thin film material
  • On-line measurement method and measurement device for residual stress of conductive thin film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0040] figure 1 It is a schematic diagram of the structure of the measurement device of the present invention, which is composed of two double-end fixed beam measurement units made of polysilicon material, which are respectively the first measurement unit and the second measurement structure unit; the first measurement unit consists of The first driving electrode 103-1, the first measuring piece 104-1, and three anchor regions are composed of three anchor regions. Metal electrodes are respectively set on the three anchor regions. Here, the three anchor regions are respectively marked as C, A, and A' ; The first drive electrode 103-1 is T-shaped, and the three ancho...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

An online measurement method and measurement apparatus for a residual stress of a conductive thin-film material (1). The method comprises: using an electrostatic driving pull-in principle to design a measurement structure; using synchronous processing to control relevance between parameters of two measurement members (104-1, 104-2); by means of limiting relevant parameters of total strain energy of the two measurement members (104-1, 104-2), constraining a partial differential equation set of the total strain energy thereof; and by means of solving the partial differential equation set, obtaining unknown numerical values of residual stress σ0 and Young's modulus E of the two measurement members (104-1, 104-2).

Description

technical field [0001] The invention relates to the field of online measurement of conductive thin films, in particular to the field of online measurement of residual stress of conductive thin film materials. Background technique [0002] The performance of microelectromechanical devices is closely related to the physical parameters of materials, and the physical parameters of materials for manufacturing microelectromechanical devices are related to the manufacturing process. That is, the manufacturing process of the material is different, and its physical parameters will also be different. The purpose of online measurement is to measure the physical parameters of MEMS materials manufactured by specific processes in real time. [0003] The basic materials of MEMS device structures are usually thin film materials, usually prepared by chemical vapor deposition (CVD) method. Residual stress is an important physical parameter of materials and has a significant impact on the pe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01L5/00G01N3/08
CPCG01L5/00G01N3/08
Inventor 顾一帆周再发黄庆安李伟华
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com