Programmable Non-Volatile Memory and Its Application in Semiconductor Storage Devices

Abstract

A reprogrammable non-volatile memory, in order to improve data write life and maintain life, using ionic conductors as ionic memory storage. The ionic conductor is doped with alkaline ions and has a resistive heater adjacent thereto. It can be applied to reprogrammable non-volatile semiconductor devices. When it is applied to a semiconductor memory, at least a portion of the P-type conductive side of the PN junction termination surface of the semiconductor memory is covered with an ion conductor film doped with alkaline ions as an ion memory, and has a resistance heating layer adjacent thereto .

Description

technical field [0001] The present invention generally relates to a reprogrammable nonvolatile memory with ion storage, in particular to a reprogrammable nonvolatile semiconductor memory utilizing ion storage, suitable for reprogrammable high-density and capacity storage applications . More specifically, it relates to memory devices with flash memory architecture, unlimited write endurance (such as reprogramming cycle count), and extended data retention lifetime, especially at high temperatures. Background technique [0002] The currently known development of reprogrammable non-volatile semiconductor memory, whether it is phase change type, conductive bridge type, ferroelectric type, floating gate type or resistive type. Compared with storage density, retentivity, remanence, write-read-erase speed, and operating temperature range, write-erase cycle count or write life is an important indicator of reliability and requires special attention. [0003] In floating gate memory,...

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Problems solved by technology

They also point out that the local power consumption during write and erase operations is so important that they will eventually be the limit of the write endurance parameter

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