Embedded circuit manufacturing method and packaging substrate
A circuit manufacturing and embedding technology, which is applied in the chemical/electrolytic method to remove conductive materials, manufacture circuits, semiconductors/solid devices, etc., to achieve the effects of easy monitoring and detection, avoiding voids or gaps, and easy infiltration
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Embodiment 1
[0028] Please refer to figure 1 , the embodiment of the present invention provides a buried circuit manufacturing method, the method is used for embedded circuit circuit board products with protruding circuit features, can be applied to high-density interconnected semiconductor packaging, and solves the problem of the same type of process The sag problem of the embedded circuit of the product. The method can include:
[0029] 101. A carrier board is provided, the carrier board includes an insulating base layer and a composite copper foil layer, and the composite copper foil layer includes two detachable ultra-thin copper foil layers.
[0030] Please refer to Figure 2a , the carrying board 20 described herein includes an insulating base layer 21 and a composite copper foil layer 22 disposed on at least one side surface of the insulating base layer. Specifically, the carrier board may be a copper clad board with a composite copper foil layer on its surface. Wherein, the ins...
Embodiment 2
[0080] Please refer to image 3 , the embodiment of the present invention provides a packaging substrate 40, which may include:
[0081] An insulating layer 27 , one side of the insulating layer 27 has a first circuit layer 26 , the first circuit layer is a buried circuit, and the top of the first circuit layer 26 is higher than the surface of the insulating layer 27 .
[0082] Optionally, the packaging base 40 may be a double-layer board. At this time, if image 3 As shown, the other side of the insulating layer 27 may have a second circuit layer 32, which is a non-embedded circuit, and the first circuit layer 26 and the second circuit layer 32 pass through the insulation The interlayer via structures of layer 27 are electrically connected.
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