CMP (chemical mechanical polishing) method

A grinding method and polysilicon thin film technology, which is applied in the field of CMP grinding, can solve problems such as dents and polysilicon residues, and achieve the effect of solving dents and residual problems
CN113223956AInactive Publication Date: 2021-08-06HUA HONG SEMICON WUXI LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HUA HONG SEMICON WUXI LTD
Publication Date
2021-08-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a CMP (chemical mechanical polishing) method, which comprises the following steps of: firstly, after a polycrystalline silicon thin film is deposited in a furnace tube, performing an oxidation process, and generating a layer of silicon oxide thin film on the surface of a polycrystalline silicon layer; secondly, adopting a DSTI CMP process for grinding, and removing the silicon oxide thin film on the surface of the polycrystalline silicon thin film at the protruding patterns, wherein the silicon oxide thin film comprises an STI region, an active region and an isolation region; and finally, performing a polycrystalline silicon CMP process for the polycrystalline silicon thin film. According to the CMP method, the silicon oxide thin film at the protruding position is firstly taken out through utilizing a high selection ratio of the oxide film CMP technology, grinding is terminated on the polycrystalline silicon thin film, then the high selection ratio of the polycrystalline silicon CMP technology is used for increasing the technology windows and removing the residual polycrystalline silicon, the polycrystalline silicon residue problem is more effectively solved, and meanwhile the sunken problem caused by excessive grinding is solved.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a CMP grinding method. Background technique

[0002] Chemical Mechanical Polishing (CMP) is a global surface planarization technique that flattens the surface of a silicon wafer through relative motion between the wafer and a polishing head. There is an abrasive between the polishing head and the silicon wafer, and a downward force is applied at the same time.

[0003] Before grinding the product, CMP must first determine a set of grinding process parameters (including: flow rate, pressure and rotational speed, etc.), and then use this set of parameters to grind the same type of film without graphics, and calculate the grinding rate of this set of processes : (film thickness before grinding - film thickness after grinding) / grinding time = grinding rate.

[0004] Then calculate the required grinding time according to the required grinding amount of the product: grind...

Claims

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