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CMP (chemical mechanical polishing) method

A grinding method and polysilicon thin film technology, which is applied in the field of CMP grinding, can solve problems such as dents and polysilicon residues, and achieve the effect of solving dents and residual problems

Inactive Publication Date: 2021-08-06
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a CMP grinding method, which can effectively remove polysilicon to solve the problem of polysilicon residue, and at the same time take into account the problem of depression caused by excessive grinding

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Embodiment Construction

[0026] The specific embodiments of the present invention are given below in conjunction with the accompanying drawings, and the technical solutions in the present invention are clearly and completely described, but the present invention is not limited to the following embodiments. Apparently, the described embodiments are some, not all, embodiments of the present invention. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0027] This invention may be embodied in different forms and should not be construed as limited to the embodiments set for...

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Abstract

The invention discloses a CMP (chemical mechanical polishing) method, which comprises the following steps of: firstly, after a polycrystalline silicon thin film is deposited in a furnace tube, performing an oxidation process, and generating a layer of silicon oxide thin film on the surface of a polycrystalline silicon layer; secondly, adopting a DSTI CMP process for grinding, and removing the silicon oxide thin film on the surface of the polycrystalline silicon thin film at the protruding patterns, wherein the silicon oxide thin film comprises an STI region, an active region and an isolation region; and finally, performing a polycrystalline silicon CMP process for the polycrystalline silicon thin film. According to the CMP method, the silicon oxide thin film at the protruding position is firstly taken out through utilizing a high selection ratio of the oxide film CMP technology, grinding is terminated on the polycrystalline silicon thin film, then the high selection ratio of the polycrystalline silicon CMP technology is used for increasing the technology windows and removing the residual polycrystalline silicon, the polycrystalline silicon residue problem is more effectively solved, and meanwhile the sunken problem caused by excessive grinding is solved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a CMP grinding method. Background technique [0002] Chemical Mechanical Polishing (CMP) is a global surface planarization technique that flattens the surface of a silicon wafer through relative motion between the wafer and a polishing head. There is an abrasive between the polishing head and the silicon wafer, and a downward force is applied at the same time. [0003] Before grinding the product, CMP must first determine a set of grinding process parameters (including: flow rate, pressure and rotational speed, etc.), and then use this set of parameters to grind the same type of film without graphics, and calculate the grinding rate of this set of processes : (film thickness before grinding - film thickness after grinding) / grinding time = grinding rate. [0004] Then calculate the required grinding time according to the required grinding amount of the product: grind...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3105H01L21/321H01L21/28H01L21/316
CPCH01L21/31053H01L21/3212H01L21/02164H01L21/02238H01L29/40114
Inventor 李志国徐杰宋振伟
Owner HUA HONG SEMICON WUXI LTD
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