Compound semiconductor thin film and preparation method thereof

Abstract

The invention relates to a compound semiconductor film and a preparation method thereof. The preparation method of the compound semiconductor film comprises the following steps of providing substrates, wherein each substrate comprises a base, a metal film preformed layer and a solid selenium film which are stacked in sequence; arranging two substrates at an interval in parallel and making the selenium films in the two substrates opposite; and simultaneously carrying out selenylation and vulcanization on the metal film preformed layers under the atmosphere containing a gaseous sulfur source, and obtaining the compound semiconductor film on the substrates. The two substrates which are arranged at the interval in parallel are taken as confinement boundaries to form a confinement reaction space, when selenylation and vulcanization are simultaneously carried out, reactants and volatile phases in a high-temperature processing process are confined in the space, so that the out-of-control influence of the reactant loss on a reaction process is avoided, a competing reaction relation between selenium and sulfur, which is difficult to control from microcosmic perspective, can be transferred to a macroscopic space which is easier to implement to control, and the selenium status, the quantity of selenium and selenylation and vulcanization reaction processes are all stably controlled.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a compound semiconductor thin film and a preparation method thereof. Background technique [0002] As a new energy source, solar energy has the advantages of being inexhaustible, clean and environmentally friendly compared with traditional fossil fuels. Among them, thin-film solar cells can be manufactured using cheap ceramics, graphite, metal sheets and other materials as substrates, and the thickness of the film that can generate voltage is only a few microns. At present, the photoelectric conversion efficiency of copper indium gallium selenide thin film solar cells is the highest. Up to 22.6%, very widely used. [0003] Compound semiconductor thin-film solar cells (such as CIGS-based, CZTS-based, Sb 2 Se 3 base and Sb 2 S 3 Base and other thin-film solar cells) are one of the most efficient and most promising thin-film solar cells among various thin-film sol...

AI Technical Summary

Problems solved by technology

However, in the process of high-temperature selenization, it is difficult to precisely control the state of selenium distributed on the surface of the sample and the amount of selenium, so that local selenium supersaturation or local selenium deficiency coexist on the surface of the film, which seriously affects the uniformity of the sample and the Selenization Quality

This is because the spatial distribution of selenium atoms is easily affected by random factors such as the space thermal field and internal and external environments, thus affecting the controllability and repeatability of the final process.

hydrogen selenide (H 2 Se) gas is highly toxic and explosive as a gaseous selenium source, resulting in high production safety and environmental pollution hazards in production; and the gas-phase selenization reaction rate is low, and the high-temperature selenization process requires more than an hour.

There is also the use of solid selenium in the selenization reaction, but the utilization rate of selenium is low, and it is often necessary to provide 1.4 to 10 times the selenium required for the reaction

Therefore, the traditional preparation method of compound semiconductor thin film is not only difficult to accurately control the selenium state and the amount of selenium distributed on the surface of the sample, but also difficult to control the process of selenization and sulfuration reaction stably, which is not conducive to the application

Images