Circuit and packaging structure having electro-static discharge protecting function between radio frequency ground and analog ground

Abstract

The invention discloses a circuit and packaging structure having an electro-static discharge protecting function between a radio frequency ground and an analog ground. The circuit comprises a first diode, a second diode and a pad. The negative electrode of the first diode and the positive electrode of the second diode are connected to the analog ground. The positive electrode of the first diode and the negative electrode of the second diode are connected to the pad. The pad is also connected to the radio frequency ground. According to the invention, parasite parameters of the electro-static discharge (ESD) protecting circuit itself will not change, matching properties of a radio frequency circuit will not change, the radio frequency ground and the analog ground will be effectively isolated, the anti-electro-static capability of the ESD protecting circuit will not be affected without wiring on a packaging laminate. Therefore, the ESD protecting circuit design of a radio frequency hybrid system is simplified.

Description

technical field [0001] The invention relates to an ESD protection circuit structure applied in the field of radio frequency hybrid ICs, in particular to a circuit and a packaging structure with electrostatic discharge protection function between radio frequency ground and analog ground. Background technique [0002] ESD stands for Electro-Static Discharge, translated as electrostatic discharge. ESD is a science formed since the middle of the 20th century to study the generation and decay of static electricity, electrostatic discharge models, electrostatic discharge effects and electromagnetic effects (such as electromagnetic interference). In recent years, with the rapid development and wide application of microelectronics technology and the increasingly complex electromagnetic environment, more and more attention has been paid to the electromagnetic field effects of electrostatic discharge, such as electromagnetic interference (EMI) and electromagnetic compatibility (EMC). ...

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Problems solved by technology

But the disadvantage of this method is also obvious, because the impedance matching of the RF pin (generally matching 50Ω impedance line) has a wide impact on the RF loss, power output, gain, bandwidth, etc., and the diode is equivalent to the impedance and capacitive reactance at the RF Therefore, the introduction of a pair of end-to-end diode structures at the RF GND will cause impedance mismatch at this port, and the impedance matching design of the RF port has to be re-evaluated and designed, which increases the complexity of the design

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