Chip barrier layer and preparation method thereof

A barrier layer and chip technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of reducing the utilization rate of target materials, increasing the number of warm-ups, and increasing labor costs. The effect of avoiding the increase in the number of maintenance, reducing the number and reducing the number of maintenance

Active Publication Date: 2020-07-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to avoid the formation of particles, the only way to increase the maintenance frequency of the sputter coating machine is to remove the TiW alloy material left on the inner wall of the chamber in time, which not only causes an increase in labor costs, but also increases the maintenance frequency. The number of warm-ups increases, causing a considerable part of the target to be wasted in the warm-up process, which reduces the utilization rate of the target and leads to an increase in production costs

Method used

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  • Chip barrier layer and preparation method thereof
  • Chip barrier layer and preparation method thereof
  • Chip barrier layer and preparation method thereof

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Embodiment 1

[0034] This embodiment provides a barrier layer of a chip, the structure of the barrier layer is a single-layer metal film structure or a multi-layer metal film stack structure, and at least one of the metal films included in the barrier layer has an amorphous structure metal film. That is to say, the structure of the barrier layer can be a single-layer metal film structure, and the metal film used to form the barrier layer is a metal film with an amorphous structure; the structure of the barrier layer can also be a multilayer metal film stacked structure, At this time, at least one metal film among the multilayer metal films used to form the barrier layer has an amorphous structure.

[0035] Metal thin films with an amorphous structure have the characteristics of amorphous structure. During the growth process of a metal thin film with an amorphous structure, the growth of crystals does not grow along a special direction, but grows disorderly, so it has an amorphous structure ...

Embodiment 2

[0041] This embodiment provides a method for preparing a barrier layer of a chip. The preparation method includes a step of preparing a TiW thin film and a step of preparing a TiWN thin film. The two steps are performed alternately, and both steps use a sputtering process. Preferably, PVD (Physical Vapor Deposition, magnetron sputtering physical vapor deposition) process is adopted. When preparing TiW thin film, TiW alloy is used as target material and DC power is applied, and Ar gas is used as sputtering gas; when TiWN thin film is prepared, there is no need to replace the target material, and TiW alloy is also used as target material and DC power is applied, and the While Ar gas is used as the sputtering gas, a path of nitrogen gas is fed in, and the plasma formed by Ar gas and nitrogen gas bombards the TiW alloy target. TiW atoms are bombarded and deposited on the substrate, and nitrogen atoms are also deposited on the substrate. , forming a TiWN thin film.

[0042] The ab...

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Abstract

The invention provides a barrier layer of a chip, and a preparation method, relates to the technical field of semiconductors, and is used for improving the blocking function of the barrier layer while the times of maintaining the sputter coating machine may be reduced or unchanged. The barrier layer on a substrate is of a single layer metal film structure or a multi-layer metal film stacked structure, and at least one layer of the metal film in the barrier layer has an amorphous structure. The barrier layer of the chip is arranged between a conductive layer and the substrate and used for preventing diffusion between the conductive layer and the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a barrier layer of a chip and a preparation method thereof. Background technique [0002] In integrated circuit chip manufacturing technology, the process of depositing a conductive metal film on a substrate by physical or chemical methods is called metallization, through which metal lines for interconnection and hole filling plugs for integrated circuits can be formed. Generally, metallization requires lamination of two metal film layers on the substrate: a barrier layer and a conductive layer, wherein the barrier layer is located between the conductive layer and the substrate, and the main function of the barrier layer is to prevent diffusion between the conductive layer and the substrate. The conductive layer mainly plays a conductive role. [0003] Commonly, the metal film used to form the barrier layer is TiW (titanium tungsten, an alloy of 10% titanium and 90% tungs...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L23/532H01L21/768
CPCH01L21/76838H01L23/53252
Inventor荣延栋郑金果侯珏卢平元夏威王厚工丁培军
OwnerBEIJING NAURA MICROELECTRONICS EQUIP CO LTD