Three-dimensional memory test structure, manufacturing method and test method thereof
A technology for memory testing and testing structure, applied in semiconductor/solid-state device testing/measurement, semiconductor devices, electric solid-state devices, etc., can solve the problems of high cost and long cycle, and achieve the effect of reducing R&D cost and shortening R&D cycle
Active Publication Date: 2019-01-29
YANGTZE MEMORY TECH CO LTD
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[0003] However, in the process of developing a three-dimensional memory in the prior art, the resistance of the grid in the three-dimensional memory is usually tested after the three-dimensional memory is manufactured, so as to judge the filling performance of the gate in the three-dimensional memory, the cycle is long, and the cost higher
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[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0040] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
[0041] The embodiment of the pr...
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Abstract
Embodiments of the invention disclose a three-dimensional storage test structure and a manufacturing method therefor, and a test method. The three-dimensional storage test structure exposes a part of region of the M layer metal grid electrode, so that in a research and development process, the resistance of the M layer metal grid electrode can be tested directly by a probe through the test method to obtain the filling performance of the metal grid electrode in the three-dimensional storage test structure so as to compare the filling performance of the metal grid electrode in different processes without requiring to test the filling performance of the metal grid electrode after the back end manufacturing process of the overall three-dimensional storage is completed; and therefore, research and development cycle is shortened, and research and development cost is lowered.
Description
technical field [0001] The invention relates to the technical field of three-dimensional memory, in particular to a three-dimensional memory test structure, a manufacturing method and a test method thereof. Background technique [0002] With the continuous development of planar memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar memory and pursue lower production costs per unit storage unit, the structure of three-dimensional memory emerged as the times require. At present, the technology research and development of three-dimensional memory has become the mainstream of international research and development. [0003] However, in the process of developing a three-dimensional memory in the prior ...
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IPC IPC(8): H01L23/544H01L21/66
Inventor 徐强夏志良刘藩东赵治国傅丰华杨要华华文宇霍宗亮
Owner YANGTZE MEMORY TECH CO LTD