Carrier device and dry etching equipment for dry etching

Abstract

The present invention provides a carrier device and dry etching equipment for dry etching, comprising an upper electrode and a lower electrode disposed opposite to each other, and a to-be-etched surface disposed on the lower electrode facing the upper electrode. The area of ​​the lower electrode is not less than the area of ​​the substrate to be etched. The beneficial effects of the present invention are that the effective use area of ​​the substrate is increased, and the effectiveness of the etching rate of the edge of the substrate is improved.

Description

technical field [0001] The invention relates to the technical field of liquid crystal product production, in particular to a carrying device and dry etching equipment for dry etching. Background technique [0002] In the liquid crystal display device production industry, when the glass substrate is dry-etched, plasma is generally used to etch the glass substrate, such as figure 1 As shown, the dry etching equipment in the current technology includes an upper electrode (not shown in the figure) and a lower electrode 2. The substrate 1 is carried on the lower electrode 2. The center of the substrate 1 coincides with the center of the lower electrode 2. The substrate 1 The area of ​​the substrate 1 is larger than the area of ​​the lower electrode 2, and the substrate 1 and the lower electrode 2 are generally rectangular structures. The first area of ​​the substrate 1 exposed to the lower electrode 2 forms an annular frame structure formed by connecting four sides end to end. Th...

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Problems solved by technology

[0002] In the liquid crystal display device production industry, when the glass substrate is dry-etched, plasma is generally used to etch the glass substrate, such as figure 1 As shown, the dry etching equipment in the current technology includes an upper electrode (not shown in the figure) and a lower electrode 2. The substrate 1 is carried on the lower electrode 2. The center of the substrate 1 coincides with the center of the lower electrode 2. The substrate 1 The area of ​​the substrate 1 is larger than that of the lower electrode 2, and the substrate 1 and the lower electrode 2 are generally rectangular structures. The first area of ​​the substrate 1 exposed to the lower electrode 2 forms a ring frame structure formed by connecting four sides end to end. The frame structure The width a of each side is 15 mm. The dry etching equipment also includes a support structure for supporting the first area of ​​the substrate 1, and the electric field formed by the upper electrode and the lower electrode is used to guide and accelerate the plasma to realize the substrate 1. The purpose of etching, but because the area of ​​the substrate is larger than the area of ​​the lower electrode, the edge of the substrate is exposed to the lower electrode, and the edge area of ​​the substrate has no electric field effect, which is less attractive to free radicals and ions, and the etch rate is lower.

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