The lower electrode mechanism of the reaction chamber and the reaction chamber

Abstract

The lower electrode mechanism and the reaction chamber of the reaction chamber provided by the present invention include a base for carrying workpieces to be processed, and a lower electrode cavity arranged under the base, and the lower electrode cavity includes electromagnetic shielding spaces isolated from each other and the non-electromagnetic shielding space, both of which communicate with the outside world through the first introduction passage and the second introduction passage respectively through the cavity of the lower electrode chamber and the side wall of the reaction chamber; to prevent the first component in the electromagnetic shielding space from being affected by Interference from a second component in a non-electromagnetically shielded space. The lower electrode mechanism provided by the present invention can not only avoid the influence of electric field uniformity caused by radio frequency interference, but also reduce radio frequency leakage.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a lower electrode mechanism of a reaction chamber and a reaction chamber. Background technique [0002] Inductively coupled plasma etching (Inductive Coupled Plasma, hereinafter referred to as ICP) equipment is widely used in the field of semiconductor wafers, especially in the field of silicon etching. [0003] Existing ICP equipment mainly includes an air inlet mechanism, an upper electrode mechanism, and a lower electrode mechanism, wherein the air inlet mechanism is used to deliver process gas into the reaction chamber; the upper electrode mechanism is used to excite the process gas to form plasma; the lower electrode mechanism It is used to carry the workpiece to be processed, and apply a radio frequency bias to the workpiece to attract plasma to etch the surface of the workpiece to be processed. [0004] The lower electrode mechanism includes a base for carrying w...

AI Technical Summary

Problems solved by technology

[0006] First, in the above-mentioned lower electrode cavity, there is mutual interference between the radio frequency connection post and other metal parts, which affects the uniformity of the electric field

[0007] Second, the above-mentioned RF connection posts, mounting plates, and bases are all conductive materials, and the three are connected to each other, resulting in RF leakage, which affects the stability of RF

Images