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Epitaxial substrate for electronic device, electronic device, method for producing epitaxial substrate for electronic device, and method for producing electronic device

A technology of electronic devices and epitaxial substrates, applied in the field of electronic device manufacturing, to achieve the effect of improving the characteristics of longitudinal leakage current

Active Publication Date: 2017-08-29
SHIN-ETSU HANDOTAI CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Epitaxial substrate for electronic device, electronic device, method for producing epitaxial substrate for electronic device, and method for producing electronic device
  • Epitaxial substrate for electronic device, electronic device, method for producing epitaxial substrate for electronic device, and method for producing electronic device
  • Epitaxial substrate for electronic device, electronic device, method for producing epitaxial substrate for electronic device, and method for producing electronic device

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Embodiment

[0087] Hereinafter, the present invention will be more specifically described by showing experimental examples, examples, and comparative examples, but the present invention is not limited to these examples.

[0088] (experimental example).

[0089] The roughness of the surface of the AlN initial layer is changed in the range of 2nm to 7.5nm (6 levels are produced), thus manufacturing such as figure 1 An epitaxial substrate 10 for an electronic device is shown. The density of the V-shaped pits constructed by the buffer layer (number of positions / cm 2 ) and the roughness Sa of the AlN initial layer surface is expressed in Figure 6 . In addition, the relationship between the vertical leakage current and the surface roughness Sa of the AlN initial layer is expressed in Figure 7 . From Figure 6 It can be seen that when the roughness of the AlN initial layer surface is more than 4nm, there is no V-shaped pit (above 4nm, the V-shaped pit almost disappears, and the Figure ...

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Abstract

The present invention is an epitaxial substrate for an electronic device, the epitaxial substrate having a Si-based substrate, an AlN initial layer provided on the Si-based substrate, and a buffer layer provided on the AlN initial layer, and the epitaxial substrate is characterized in that the roughness Sa of the surface on the buffer layer side of the AlN initial layer is 4 nm or more. Due to this configuration, provided is an epitaxial substrate for an electronic device, in which V-shaped pits in the buffer layer structure are prevented and longitudinal leak current characteristics can be improved when an electronic device is produced.

Description

technical field [0001] The present invention relates to an epitaxial substrate for an electronic device, an electronic device, a method for manufacturing an epitaxial substrate for an electronic device, and a method for manufacturing an electronic device. Background technique [0002] Regarding the manufacturing technology of compound semiconductor epitaxial wafers for electronic devices, research is underway to improve the electrical characteristics, especially the vertical leakage current, of semiconductor epitaxial wafers on which gallium nitride (GaN) films are epitaxially grown on silicon (Si) substrates Manufacturing method. [0003] In such studies, after the semiconductor epitaxial wafer is manufactured, devices are fabricated on the surface of the semiconductor epitaxial wafer, and electrical characteristics are evaluated. [0004] Conventionally, in order to perform epitaxial growth, it has been preferable that the surface of the substrate on which epitaxial growt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/338H01L21/20H01L21/336H01L29/778H01L29/78H01L29/812
CPCH01L29/78H01L29/7786C30B25/183C30B29/403H01L21/02513H01L21/02381H01L21/02458H01L21/02507H01L21/0254H01L29/2003H01L21/02293H01L29/778H01L29/812H01L2924/10323H01L2924/05032
Inventor 萩本和德篠宫胜土屋庆太郎后藤博一佐藤宪鹿内洋志
Owner SHIN-ETSU HANDOTAI CO LTD