Unlock instant, AI-driven research and patent intelligence for your innovation.

Epitaxial substrate for electronic device, electronic device, method for manufacturing epitaxial substrate for electronic device, and method for manufacturing electronic device

A technology of electronic devices and epitaxial substrates, applied in the field of electronic device manufacturing, to achieve the effect of improving the characteristics of longitudinal leakage current

Active Publication Date: 2020-11-13
SHIN-ETSU HANDOTAI CO LTD +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, regarding electrical characteristics, Patent Document 1 does not mention

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial substrate for electronic device, electronic device, method for manufacturing epitaxial substrate for electronic device, and method for manufacturing electronic device
  • Epitaxial substrate for electronic device, electronic device, method for manufacturing epitaxial substrate for electronic device, and method for manufacturing electronic device
  • Epitaxial substrate for electronic device, electronic device, method for manufacturing epitaxial substrate for electronic device, and method for manufacturing electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0087] Hereinafter, the present invention will be more specifically described by showing experimental examples, examples, and comparative examples, but the present invention is not limited to these examples.

[0088] (experimental example).

[0089] The roughness of the surface of the AlN initial layer is changed in the range of 2nm to 7.5nm (6 levels are produced), thus manufacturing such as figure 1 An epitaxial substrate 10 for an electronic device is shown. The density of the V-shaped pits constructed by the buffer layer (number of positions / cm 2 ) and the roughness Sa of the AlN initial layer surface is expressed in Image 6 . In addition, the relationship between the vertical leakage current and the surface roughness Sa of the AlN initial layer is expressed in Figure 7 . from Image 6 It can be seen that when the roughness of the AlN initial layer surface is more than 4nm, there is no V-shaped pit (above 4nm, the V-shaped pit almost disappears, and the Image 6 T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The present invention is an epitaxial substrate for electronic devices, which has: a silicon-based substrate; an AlN initial layer disposed on the silicon-based substrate; and a buffer layer disposed on the AlN initial layer; the aforementioned AlN initial layer The roughness Sa of the surface of the layer on the buffer layer side is 4 nm or more. Thus, there is provided an epitaxial substrate for electronic devices capable of suppressing V-shaped pits in a buffer layer structure and improving vertical leakage current characteristics when manufacturing electronic devices.

Description

technical field [0001] The present invention relates to an epitaxial substrate for an electronic device, an electronic device, a method for manufacturing an epitaxial substrate for an electronic device, and a method for manufacturing an electronic device. Background technique [0002] Regarding the manufacturing technology of compound semiconductor epitaxial wafers for electronic devices, research is underway to improve the electrical characteristics, especially the vertical leakage current, of semiconductor epitaxial wafers on which gallium nitride (GaN) films are epitaxially grown on silicon (Si) substrates Production method. [0003] In such studies, after the semiconductor epitaxial wafer is manufactured, devices are fabricated on the surface of the semiconductor epitaxial wafer, and electrical characteristics are evaluated. [0004] Conventionally, in order to perform epitaxial growth, it has been preferable that the surface of the substrate on which epitaxial growth i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/338H01L21/20H01L21/336H01L29/778H01L29/78H01L29/812
CPCH01L29/78H01L29/7786C30B25/183C30B29/403H01L21/02513H01L21/02381H01L21/02458H01L21/02507H01L21/0254H01L29/2003H01L21/02293H01L29/778H01L29/812H01L2924/10323H01L2924/05032
Inventor 萩本和德篠宫胜土屋庆太郎后藤博一佐藤宪鹿内洋志
Owner SHIN-ETSU HANDOTAI CO LTD