A photolithography process for gpp chip manufacturing
A technology of photolithography and photoresist, which is applied in the field of photolithography and can solve problems such as explosion hazards
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0027] A photolithography process for GPP chip manufacture, the steps are as follows:
[0028] 1. Coating: Spin coating on both sides of a clean and dry silicon wafer substrate using SUN-WS001, a common negative photoresist product from Startech.
[0029] 2. Pre-baking: After coating, bake on a hot plate at 110°C for 2 minutes to remove the solvent in the film, and the measured film thickness is about 3 μm.
[0030] 3. Exposure: UV exposure, through the mask plate to expose both sides of the silicon wafer at the same time.
[0031] 4. Medium baking: Baking in an oven at 120°C for 4 minutes to improve the adhesion between the film and the silicon substrate.
[0032] 5. Developing: developing with 2.38wt% tetramethylammonium hydroxide (TMAH) aqueous solution as the developing solution, the developing temperature is 25°C, and the developing time is 3min, to form photolithographic patterns.
[0033] 6. Fixing: Rinse the developed silicon wafer with deionized water to remove the ...
Embodiment 2
[0038] A photolithography process for GPP chip manufacture, the steps are as follows:
[0039] 1. Coating: Spin coating on both sides of a clean and dry silicon wafer substrate using SUN-WS002, a common negative photoresist product from Startech.
[0040] 2. Pre-baking: After coating, bake in an oven at 110°C for 8 minutes to remove the solvent in the film, and the measured film thickness is about 5 μm.
[0041] 3. Exposure: UV exposure, through the mask plate to expose both sides of the silicon wafer at the same time.
[0042] 4. Developing: developing with 1wt% KOH aqueous solution as the developing solution, the developing temperature is 25°C, and the developing time is 3min to form photolithography pattern.
[0043] 5. Fixing: Rinse the developed silicon wafer with deionized water to remove the developer and impurities remaining on the surface of the film.
[0044] 6. Post-baking: Bake the fixed silicon wafer in an oven at 200°C for 30 minutes to remove residual solvent,...
Embodiment 3
[0048] A photolithography process for GPP chip manufacture, the steps are as follows:
[0049] 1. Coating: Spin-coat on a clean and dry silicon wafer substrate with SUN-WS003, a common negative photoresist series product from Startech.
[0050] 2. Pre-baking: After coating, bake on a hot plate at 110°C for 3 minutes to remove the solvent in the film, and the measured film thickness is about 10 μm.
[0051] 3. Exposure: UV exposure, through the mask plate to expose both sides of the silicon wafer at the same time.
[0052] 4. Medium baking: bake in an oven at 120°C for 3 minutes.
[0053] 5. Development: develop with 2.38wt% TMAH aqueous solution as the developer, the development temperature is 25°C, and the development time is 4min to form a photolithographic pattern.
[0054] 6. Fixing: Rinse the developed silicon wafer with deionized water to remove the developer and impurities remaining on the surface of the film.
[0055] 7. Post-baking: Bake the fixed silicon wafer in ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More