COA substrate formed directly by splicing photomasks and display panel

Abstract

An embodiment of the invention discloses a COA substrate formed directly by splicing photomasks. The COA substrate comprises an array substrate, metal lines formed on the array substrate, a first color resistance layer formed on the array substrate and partly positioned on the metal line and a second color resistance layer formed on the array substrate and partly positioned on the metal line, the first color resistance layer and the second color resistance layer are overlapped partly at least, the metal lines include first metal lines, the first metal lines correspond to positions where the photomasks are directly spliced, and width of the first metal lines is greater than width of a first overlapped area of the first color resistance layer and the second color resistance layer corresponding to the first metal lines by 2-6 mu m to enable the first overlapped area to be positioned in a range of the first metal lines. The embodiment of the invention further discloses a display panel. The COA substrate has the advantage that bad display effect caused by photomask shift in the process of directly splicing the photomasks can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a COA substrate and a display panel formed by direct splicing of photomasks. Background technique [0002] At present, when making large-size display panels, because the size of the product exceeds the typesetting size of the mask (mask), splicing exposure is required to convert the mask pattern to the large-size display panel. The splicing technology currently used includes direct mask splicing technology, mask The direct splicing technology is specifically: first place the mask on one side of the substrate for the first exposure, and then move the mask to the unexposed area adjacent to the first exposure area for the second exposure, if the display panel The size is large, and multiple exposures can be performed. This direct splicing technology of the mask solves the exposure problem of large-size display panels. [0003] Existing display panels include COA (Color Filter On A...

AI Technical Summary

Problems solved by technology

In the process of forming the first color-resist layer 130 and the second color-resist layer 140, the first color-resist layer 130 and the second color-resist layer 140 are respectively formed by the direct splicing technology of the photomask, and the photomask may go to Shifting to the left or shifting to the right causes the overlapping area of ​​the first color-resist layer 130 and the second color-resisting layer 140 to move to the left or to the right relative to other overlapping areas of the COA substrate at the joint of the photomask, resulting in the first The overlapping area of ​​the first color-resist layer 130 and the second color-resist layer 140 partially exceeds the range of the first metal line 120 (see FIG. Figure 1b and Figure 1c ), at this time, the light transmitted from the backlight is divided into three types (the light below the first metal line 120 is blocked by the first metal line 120 and cannot be transmitted): the first light is only transmitted through the first color resist layer 130, the second type of light is transmitted only through the second color-resist layer 140, the third type of light is transmitted through the overlapping area of ​​the first color-resist layer 130 and the second color-resist layer 140 beyond the range of the first metal line 120, the third type of light The colors of the first color-resist layer 130 and the second color-resist layer 140 are combined, which is not what the designer wants the user to see, causing the user to see the third light, resulting in the color and display of the direct splicing of the corresponding photomask on the display panel Other areas of the panel are colored differently, resulting in mura

Images